페이지 12 - 트랜지스터 - 양극(BJT) - RF | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP540FESDE6327	Infineon Technologies	TRANS RF NPN 4.5V 80MA 4TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Gain: 20dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	패키지: 4-SMD, Flat Leads	재고6,592	5V	30GHz	0.9dB ~ 1.4dB @ 1.8GHz	20dB	250mW	50 @ 20mA, 3.5V	80mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BFS 386L6 E6327	Infineon Technologies	TRANSISTOR ARRAY DUAL NPN TSLP-6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 1.8GHz ~ 3GHz Gain: 10dB ~ 14.5dB Power - Max: 210mW, 380mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V / 60 @ 40mA, 3V Current - Collector (Ic) (Max): 35mA, 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: PG-TSLP-6	패키지: 6-XFDFN	재고3,232	6V	14GHz	1dB ~ 1.6dB @ 1.8GHz ~ 3GHz	10dB ~ 14.5dB	210mW, 380mW	60 @ 15mA, 3V / 60 @ 40mA, 3V	35mA, 80mA	150°C (TJ)	Surface Mount	6-XFDFN	PG-TSLP-6
2SC5096-R,LF	Toshiba Semiconductor and Storage	TRANS RF NPN 10V 1GHz SSM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Gain: 1.4dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	패키지: SC-75, SOT-416	재고5,952	10V	10GHz	1.4dB @ 1GHz	1.4dB	100mW	50 @ 7mA, 6V	15mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SSM
MAX2602ESA	Maxim Integrated	TRANS RF NPN 900MHZ 15V 8SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1GHz Noise Figure (dB Typ @ f): 3.3dB @ 836MHz Gain: 11.6dB Power - Max: 6.4W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고99,000	15V	1GHz	3.3dB @ 836MHz	11.6dB	6.4W	100 @ 250mA, 3V	1.2A	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
MRF5812GR2	Microsemi Corporation	TRANS NPN 15V 200MA 8-SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,320	15V	5GHz	2dB ~ 3dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MPSH81_D27Z	Fairchild/ON Semiconductor	TRANS RF PNP 20V 50MA TO-92 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,968	20V	600MHz	-	-	350mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
BLS2731-20,114	Ampleon USA Inc.	TRANSISTOR RF POWER SOT445C Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 3.1GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 270W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-445C Supplier Device Package: CDFM2	패키지: SOT-445C	재고3,760	75V	3.1GHz	-	10dB	270W	40 @ 500mA, 5V	3A	200°C (TJ)	Surface Mount	SOT-445C	CDFM2
BLS2731-10,114	NXP	TRANSISTOR RF POWER SOT445C Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 3.1GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 145W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-445C Supplier Device Package: CDFM2	패키지: SOT-445C	재고2,544	75V	3.1GHz	-	10dB	145W	40 @ 250mA, 5V	1.5A	200°C (TJ)	Surface Mount	SOT-445C	CDFM2
BLT70,115	NXP	TRANS NPN 8V 250MA SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 900MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 2.1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 4.8V Current - Collector (Ic) (Max): 250mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: TO-261-4, TO-261AA	재고7,792	8V	900MHz	-	-	2.1W	25 @ 100mA, 4.8V	250mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
HFA3127B96	Intersil	IC TRANS ARRAY NPN 16-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고190,572	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
KSC1674COTA	Fairchild/ON Semiconductor	TRANSISTOR NPN 20V 20MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Gain: - Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	재고3,408	20V	600MHz	3dB ~ 5dB @ 100MHz	-	250mW	70 @ 1mA, 6V	20mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
KST5179MTF	Fairchild/ON Semiconductor	TRANS RF NPN 12V 50MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 900MHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	패키지: TO-236-3, SC-59, SOT-23-3	재고294,000	12V	900MHz	4.5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
MPS5179G	ON Semiconductor	TRANS NPN RF SS 12V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고2,720	12V	2GHz	-	-	200mW	25 @ 3mA, 1V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFR520,235	NXP	TRANS NPN 15V 70MA 9GHZ SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23)	패키지: TO-236-3, SC-59, SOT-23-3	재고6,448	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)
JTDB25	Microsemi Corporation	TRANSISTOR BIPO 55AW-1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.5dB Power - Max: 97W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	패키지: 55AW-1	재고4,304	55V	960MHz ~ 1.215GHz	-	7.5dB	97W	20 @ 500mA, 5V	5A	200°C (TJ)	Chassis Mount	55AW-1	55AW-1
TAN15	Microsemi Corporation	TRANS RF BIPO 175W 2A 55LT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7dB ~ 8dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LT Supplier Device Package: 55LT	패키지: 55LT	재고4,320	50V	960MHz ~ 1.215GHz	-	7dB ~ 8dB	175W	-	2A	200°C (TJ)	Chassis Mount	55LT	55LT
MS2553C	Microsemi Corporation	TRANS RF BIPO 175W 4A M220 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10.5dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M220 Supplier Device Package: M220	패키지: M220	재고7,520	25V	1.025GHz ~ 1.15GHz	-	10.5dB	175W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	M220	M220
HFA3127BZ96	Intersil	IC TRANS ARRAY NPN 16-SOIC Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고6,496	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
BFP840FESDH6327XTSA1	Infineon Technologies	IC TRANSISTOR RF NPN TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.6V Frequency - Transition: 85GHz Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz Gain: 35dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: 4-TSFP	패키지: SC-82A, SOT-343	재고2,224	2.6V	85GHz	0.75dB @ 5.5GHz	35dB	75mW	150 @ 10mA, 1.8V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	4-TSFP
2SC39300CL	Panasonic Electronic Components	TRANS NPN 20VCEO 30MA S-MINI 3P Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1	패키지: SC-70, SOT-323	재고28,740	20V	250MHz	2.8dB ~ 4dB @ 5MHz	-	150mW	110 @ 1mA, 10V	30mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SMini3-G1
2SC5095-R(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM-USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	패키지: SC-70, SOT-323	재고7,776	10V	10GHz	1.8dB @ 2GHz	13dB ~ 7.5dB	100mW	50 @ 7mA, 6V	15mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
2SC5226A-5-TL-E	ON Semiconductor	TRANS NPN BIPO VHF-UHF MCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	패키지: SC-70, SOT-323	재고23,922	10V	7GHz	1dB @ 1GHz	12dB	150mW	135 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-MCP
BFP183WH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 22dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	패키지: SC-82A, SOT-343	재고59,844	12V	8.5GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	22dB	450mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
MPSH81	Central Semiconductor Corp	TRANS PNP 20V 50MA TO92 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	패키지: TO-226-3, TO-92-3 (TO-226AA)	재고15,024	20V	600MHz	-	-	350mW	60 @ 5mA, 10V	50mA	-65°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
MS1001A	Microsemi Corporation	TRANS RF BIPO 270W 20A Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MS2589	Microsemi Corporation	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MRF6V14300MSR5	Freescale Semiconductor	RF POWER FIELD-EFFECT TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
PH1214-25M	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,25W,28V,1.20- Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 67W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 2.8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	패키지: -	Request a Quote	70V	-	-	9.5dB	67W	-	2.8A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
2N3497	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 120V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	패키지: -	Request a Quote	120V	150MHz	-	-	400mW	40 @ 50mA, 10V	100mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)
CP302-MPSH10-WN	Central Semiconductor Corp	RF TRANS NPNUHF/VHF Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: -	Request a Quote	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die

BFP540FESDE6327

Infineon Technologies

TRANS RF NPN 4.5V 80MA 4TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 20dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

패키지: 4-SMD, Flat Leads

재고6,592

5V

30GHz

0.9dB ~ 1.4dB @ 1.8GHz

20dB

250mW

50 @ 20mA, 3.5V

80mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BFS 386L6 E6327

Infineon Technologies

TRANSISTOR ARRAY DUAL NPN TSLP-6

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Gain: 10dB ~ 14.5dB
Power - Max: 210mW, 380mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V / 60 @ 40mA, 3V
Current - Collector (Ic) (Max): 35mA, 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: PG-TSLP-6

패키지: 6-XFDFN

재고3,232

6V

14GHz

1dB ~ 1.6dB @ 1.8GHz ~ 3GHz

10dB ~ 14.5dB

210mW, 380mW

60 @ 15mA, 3V / 60 @ 40mA, 3V

35mA, 80mA

150°C (TJ)

Surface Mount

6-XFDFN

PG-TSLP-6

2SC5096-R,LF

Toshiba Semiconductor and Storage

TRANS RF NPN 10V 1GHz SSM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Gain: 1.4dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

패키지: SC-75, SOT-416

재고5,952

10V

10GHz

1.4dB @ 1GHz

1.4dB

100mW

50 @ 7mA, 6V

15mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SSM

MAX2602ESA

Maxim Integrated

TRANS RF NPN 900MHZ 15V 8SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1GHz
Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
Gain: 11.6dB
Power - Max: 6.4W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
Current - Collector (Ic) (Max): 1.2A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고99,000

15V

1GHz

3.3dB @ 836MHz

11.6dB

6.4W

100 @ 250mA, 3V

1.2A

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

MRF5812GR2

Microsemi Corporation

TRANS NPN 15V 200MA 8-SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,320

15V

5GHz

2dB ~ 3dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MPSH81_D27Z

Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,968

20V

600MHz

-

350mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

BLS2731-20,114

Ampleon USA Inc.

TRANSISTOR RF POWER SOT445C

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 270W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-445C
Supplier Device Package: CDFM2

패키지: SOT-445C

재고3,760

75V

3.1GHz

-

10dB

270W

40 @ 500mA, 5V

3A

200°C (TJ)

Surface Mount

SOT-445C

CDFM2

BLS2731-10,114

NXP

TRANSISTOR RF POWER SOT445C

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 145W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-445C
Supplier Device Package: CDFM2

패키지: SOT-445C

재고2,544

75V

3.1GHz

-

10dB

145W

40 @ 250mA, 5V

1.5A

200°C (TJ)

Surface Mount

SOT-445C

CDFM2

BLT70,115

NXP

TRANS NPN 8V 250MA SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 2.1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 4.8V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

패키지: TO-261-4, TO-261AA

재고7,792

8V

900MHz

-

2.1W

25 @ 100mA, 4.8V

250mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

HFA3127B96

Intersil

IC TRANS ARRAY NPN 16-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고190,572

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

KSC1674COTA

Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: -
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

재고3,408

20V

600MHz

3dB ~ 5dB @ 100MHz

-

250mW

70 @ 1mA, 6V

20mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

KST5179MTF

Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

재고294,000

12V

900MHz

4.5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

MPS5179G

ON Semiconductor

TRANS NPN RF SS 12V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고2,720

12V

2GHz

-

200mW

25 @ 3mA, 1V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFR520,235

NXP

TRANS NPN 15V 70MA 9GHZ SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)

패키지: TO-236-3, SC-59, SOT-23-3

재고6,448

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

JTDB25

Microsemi Corporation

TRANSISTOR BIPO 55AW-1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.5dB
Power - Max: 97W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW-1
Supplier Device Package: 55AW-1

패키지: 55AW-1

재고4,304

55V

960MHz ~ 1.215GHz

-

7.5dB

97W

20 @ 500mA, 5V

5A

200°C (TJ)

Chassis Mount

55AW-1

TAN15

Microsemi Corporation

TRANS RF BIPO 175W 2A 55LT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB ~ 8dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55LT
Supplier Device Package: 55LT

패키지: 55LT

재고4,320

50V

960MHz ~ 1.215GHz

-

7dB ~ 8dB

175W

-

2A

200°C (TJ)

Chassis Mount

55LT

MS2553C

Microsemi Corporation

TRANS RF BIPO 175W 4A M220

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10.5dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M220
Supplier Device Package: M220

패키지: M220

재고7,520

25V

1.025GHz ~ 1.15GHz

-

10.5dB

175W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

M220

HFA3127BZ96

Intersil

IC TRANS ARRAY NPN 16-SOIC

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고6,496

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

BFP840FESDH6327XTSA1

Infineon Technologies

IC TRANSISTOR RF NPN TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.6V
Frequency - Transition: 85GHz
Noise Figure (dB Typ @ f): 0.75dB @ 5.5GHz
Gain: 35dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: 4-TSFP

패키지: SC-82A, SOT-343

재고2,224

2.6V

85GHz

0.75dB @ 5.5GHz

35dB

75mW

150 @ 10mA, 1.8V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

4-TSFP

2SC39300CL

Panasonic Electronic Components

TRANS NPN 20VCEO 30MA S-MINI 3P

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1

패키지: SC-70, SOT-323

재고28,740

20V

250MHz

2.8dB ~ 4dB @ 5MHz

-

150mW

110 @ 1mA, 10V

30mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SMini3-G1

2SC5095-R(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 13dB ~ 7.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

패키지: SC-70, SOT-323

재고7,776

10V

10GHz

1.8dB @ 2GHz

13dB ~ 7.5dB

100mW

50 @ 7mA, 6V

15mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

2SC5226A-5-TL-E

ON Semiconductor

TRANS NPN BIPO VHF-UHF MCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP

패키지: SC-70, SOT-323

재고23,922

10V

7GHz

1dB @ 1GHz

12dB

150mW

135 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-MCP

BFP183WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8.5GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 22dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

패키지: SC-82A, SOT-343

재고59,844

12V

8.5GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

22dB

450mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

MPSH81

Central Semiconductor Corp

TRANS PNP 20V 50MA TO92

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92

패키지: TO-226-3, TO-92-3 (TO-226AA)

재고15,024

20V

600MHz

-

350mW

60 @ 5mA, 10V

50mA

-65°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92

MS1001A

Microsemi Corporation

TRANS RF BIPO 270W 20A

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MS2589

Microsemi Corporation

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MRF6V14300MSR5

Freescale Semiconductor

RF POWER FIELD-EFFECT TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

PH1214-25M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,25W,28V,1.20-

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 67W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 2.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

패키지: -

Request a Quote

70V

-

9.5dB

67W

-

2.8A

200°C (TJ)

Chassis Mount

2L-FLG

2N3497

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 120V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

패키지: -

Request a Quote

120V

150MHz

-

400mW

40 @ 50mA, 10V

100mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)

CP302-MPSH10-WN

Central Semiconductor Corp

RF TRANS NPNUHF/VHF

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: -

Request a Quote

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

-65°C ~ 150°C (TJ)

Surface Mount

Die