페이지 890 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N5822-A	Diodes Incorporated	DIODE SCHOTTKY 40V 3A DO201AD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고3,344	-	-	-	-	-	-	-	-	-	-	-
GP10KHM3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고4,032	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 800V	7pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MSG105	Microsemi Corporation	DIODE SCHOTTKY 50V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고5,648	50V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
GI854-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-201AD, Axial	재고2,528	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 400V	28pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
CD1005-S0180R	Bourns Inc.	DIODE GEN PURP 80V 100MA 1005 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 80V Capacitance @ Vr, F: 4pF @ 1V, 100MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005 Operating Temperature - Junction: -40°C ~ 125°C	패키지: 1005 (2512 Metric)	재고7,392	80V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 80V	4pF @ 1V, 100MHz	Surface Mount	1005 (2512 Metric)	1005	-40°C ~ 125°C
VS-60CPF02PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-247-3	재고6,912	200V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	100µA @ 200V	-	Through Hole	TO-247-3	TO-247AC	-40°C ~ 150°C
10ETF12FP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 10A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220AC Full Pack Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-2 Full Pack	재고4,368	1200V	10A	1.33V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	310ns	100µA @ 1200V	-	Through Hole	TO-220-2 Full Pack	TO-220AC Full Pack	-40°C ~ 150°C
RS1M-13	Diodes Incorporated	DIODE GEN PURP 1KV 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고6,288	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
VS-245NQ015PBF	Vishay Semiconductor Diodes Division	DIODE MODULE 150V 240A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 520mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80mA @ 15V Capacitance @ Vr, F: 15800pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	패키지: D-67 HALF-PAK	재고7,392	15V	240A	520mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	80mA @ 15V	15800pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-
VS-87HF40	Vishay Semiconductor Diodes Division	DIODE GENERAL PURPOSE 85A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고6,208	400V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
FR40DR02	GeneSiC Semiconductor	DIODE GEN PURP REV 200V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고3,776	200V	40A	1V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
JAN1N5621	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 500nA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	패키지: A, Axial	재고7,552	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
VS-8ETL06FPPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-220-2 Full Pack	재고7,440	600V	8A	1.05V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full Pack	-65°C ~ 175°C
SF805G C0G	TSC America Inc.	DIODE, SUPER FAST, 8A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3	재고4,672	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SURHS8160T3G	ON Semiconductor	DIODE ULT FAST 600V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AA, SMB	재고4,976	600V	1A	2.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 600V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
UPR5E3/TR13	Microsemi Corporation	DIODE GEN PURP 50V 2.5A DO216 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: DO-216 Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-216AA	재고6,112	50V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 50V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
BYM11-200HE3/96	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고5,232	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
BYG10GHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고4,608	400V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS12LHR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-219AB	재고7,424	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
RSFDLHRHG	TSC America Inc.	DIODE, FAST, 0.5A, 200V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고7,360	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1KHM2G	TSC America Inc.	DIODE, 1A, 800V, AEC-Q101, DO-21 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AC, SMA	재고3,472	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
TST20H120CW C0G	TSC America Inc.	DIODE, SCHOTTKY, TRENCH, 20A, 12 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-3	재고5,168	120V	10A	900mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 120V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
PMEG2020AEA,115	Nexperia USA Inc.	DIODE SCHOTTKY 20V 2A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 525mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	패키지: SC-76, SOD-323	재고2,880	20V	2A (DC)	525mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	70pF @ 5V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C
ES2F-E3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-214AA, SMB	재고348,000	300V	2A	1.1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	15pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-50°C ~ 150°C
VS-1N1187A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 126A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.5mA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-203AB, DO-5, Stud	재고7,792	300V	40A	1.3V @ 126A	Standard Recovery >500ns, > 200mA (Io)	-	2.5mA @ 300V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 200°C
DSEP30-12CR	IXYS	DIODE GEN 1.2KV 30A ISOPLUS247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 4.98V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 250µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: ISOPLUS247? Supplier Device Package: ISOPLUS247? Operating Temperature - Junction: -55°C ~ 175°C	패키지: ISOPLUS247?	재고4,560	1200V	30A	4.98V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	250µA @ 1200V	-	Through Hole	ISOPLUS247?	ISOPLUS247?	-55°C ~ 175°C
S3DB	Fairchild/ON Semiconductor	DIODE GP 200V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 18pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고4,928	200V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	18pF @ 0V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RGP10GE-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-204AL, DO-41, Axial	재고3,824	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
US2BA	Fairchild/ON Semiconductor	DIODE GP 100V 1.5A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고6,000	100V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
S1PB-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고324,000	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 100V	6pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C

1N5822-A

Diodes Incorporated

DIODE SCHOTTKY 40V 3A DO201AD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고3,344

-

GP10KHM3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고4,032

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 800V

7pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

MSG105

Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고5,648

50V

1A

690mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

GI854-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-201AD, Axial

재고2,528

400V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 400V

28pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

CD1005-S0180R

Bourns Inc.

DIODE GEN PURP 80V 100MA 1005

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 80V
Capacitance @ Vr, F: 4pF @ 1V, 100MHz
Mounting Type: Surface Mount
Package / Case: 1005 (2512 Metric)
Supplier Device Package: 1005
Operating Temperature - Junction: -40°C ~ 125°C

패키지: 1005 (2512 Metric)

재고7,392

80V

100mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

50nA @ 80V

4pF @ 1V, 100MHz

Surface Mount

1005 (2512 Metric)

1005

-40°C ~ 125°C

VS-60CPF02PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 60A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-247-3

재고6,912

200V

60A

1.3V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

100µA @ 200V

-

Through Hole

TO-247-3

TO-247AC

-40°C ~ 150°C

10ETF12FP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 10A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2 Full Pack

재고4,368

1200V

10A

1.33V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

310ns

100µA @ 1200V

-

Through Hole

TO-220-2 Full Pack

TO-220AC Full Pack

-40°C ~ 150°C

RS1M-13

Diodes Incorporated

DIODE GEN PURP 1KV 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고6,288

1000V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

VS-245NQ015PBF

Vishay Semiconductor Diodes Division

DIODE MODULE 150V 240A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80mA @ 15V
Capacitance @ Vr, F: 15800pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: D-67 HALF-PAK
Supplier Device Package: D-67
Operating Temperature - Junction: -

패키지: D-67 HALF-PAK

재고7,392

15V

240A

520mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

80mA @ 15V

15800pF @ 5V, 1MHz

Chassis Mount

D-67 HALF-PAK

D-67

-

VS-87HF40

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고6,208

400V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

FR40DR02

GeneSiC Semiconductor

DIODE GEN PURP REV 200V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고3,776

200V

40A

1V @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

JAN1N5621

Microsemi Corporation

DIODE GEN PURP 800V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 500nA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

패키지: A, Axial

재고7,552

800V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

500nA @ 800V

-

Through Hole

A, Axial

-

-65°C ~ 175°C

VS-8ETL06FPPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2 Full Pack

재고7,440

600V

8A

1.05V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

-

Through Hole

TO-220-2 Full Pack

-65°C ~ 175°C

SF805G C0G

TSC America Inc.

DIODE, SUPER FAST, 8A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3

재고4,672

300V

8A

1.3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 300V

50pF @ 4V, 1MHz

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

SURHS8160T3G

ON Semiconductor

DIODE ULT FAST 600V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 20µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AA, SMB

재고4,976

600V

1A

2.4V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

20µA @ 600V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

UPR5E3/TR13

Microsemi Corporation

DIODE GEN PURP 50V 2.5A DO216

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 2µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-216AA

재고6,112

50V

2.5A

975mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

2µA @ 50V

-

Surface Mount

DO-216AA

DO-216

-55°C ~ 150°C

BYM11-200HE3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고5,232

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

BYG10GHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A SMA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고4,608

400V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 400V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SS12LHR3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-219AB

재고7,424

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 125°C

RSFDLHRHG

TSC America Inc.

DIODE, FAST, 0.5A, 200V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고7,360

200V

500mA

1.3V @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

4pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

S1KHM2G

TSC America Inc.

DIODE, 1A, 800V, AEC-Q101, DO-21

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AC, SMA

재고3,472

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

1µA @ 800V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

TST20H120CW C0G

TSC America Inc.

DIODE, SCHOTTKY, TRENCH, 20A, 12

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-3

재고5,168

120V

10A

900mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 120V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

PMEG2020AEA,115

Nexperia USA Inc.

DIODE SCHOTTKY 20V 2A SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 525mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

패키지: SC-76, SOD-323

재고2,880

20V

2A (DC)

525mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

70pF @ 5V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C

ES2F-E3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-214AA, SMB

재고348,000

300V

2A

1.1V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 300V

15pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-50°C ~ 150°C

VS-1N1187A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 40A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 126A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.5mA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-203AB, DO-5, Stud

재고7,792

300V

40A

1.3V @ 126A

Standard Recovery >500ns, > 200mA (Io)

-

2.5mA @ 300V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 200°C

DSEP30-12CR

IXYS

DIODE GEN 1.2KV 30A ISOPLUS247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 4.98V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: ISOPLUS247?
Supplier Device Package: ISOPLUS247?
Operating Temperature - Junction: -55°C ~ 175°C

패키지: ISOPLUS247?

재고4,560

1200V

30A

4.98V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

250µA @ 1200V

-

Through Hole

ISOPLUS247?

-55°C ~ 175°C

S3DB

Fairchild/ON Semiconductor

DIODE GP 200V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 18pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고4,928

200V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

10µA @ 200V

18pF @ 0V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RGP10GE-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

재고3,824

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

US2BA

Fairchild/ON Semiconductor

DIODE GP 100V 1.5A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고6,000

100V

1.5A

1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

50pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

S1PB-M3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고324,000

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 100V

6pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C