페이지 865 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4004GP-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,312	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
VS-30WQ10FNTRRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 3.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: 92pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,048	100V	3.5A	810mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	92pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
VS-10TQ035-N3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 10A TO-220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 40V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고5,392	35V	10A	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 40V	900pF @ 5V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
MBRF2090HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 20A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고7,600	90V	20A	950mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
BYT56D-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 3A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	패키지: SOD-64, Axial	재고2,800	200V	3A	1.4V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	5µA @ 200V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
MUR320SBHM4G	TSC America Inc.	DIODE, ULTRA FAST, 3A, 200V, 25N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-214AA, SMB	재고2,320	200V	3A	900mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
S3D-M3/57T	Vishay Semiconductor Diodes Division	DIODE GPP 3A 200V DO-214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고6,288	200V	3A	1.15V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
S5A-M3/9AT	Vishay Semiconductor Diodes Division	DIODE GPP 5A 50V DO-214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고5,056	50V	5A	1.15V @ 5A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	10µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
AM01V0	Sanken	DIODE GEN PURP 400V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고3,488	400V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
BAT43W-HE3-18	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C (Max)	패키지: SOD-123	재고7,680	30V	200mA (DC)	450mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C (Max)
SS110LHRQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고3,424	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1ML RHG	TSC America Inc.	DIODE, FAST, 0.8A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고3,488	-	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
PR1002-T	Diodes Incorporated	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,728	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
LS4151-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 50nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	패키지: SOD-80 Variant	재고4,064	50V	300mA	1V @ 50mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
AU1PM-M3/84A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1000V 1A DO220AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-220AA	재고348,000	1000V	1A	1.85V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 1000V	7.5pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
VS-HFA30PB120PBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 30A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 4.1V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 170ns Current - Reverse Leakage @ Vr: 40µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-247-2	재고8,844	1200V	30A	4.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	170ns	40µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
B5817WSHE3-TP	Micro Commercial Co	DIODE SCHOTTKY 20V 1A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	재고5,166	20 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	120pF @ 4V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
BYM07-200HE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GP 200V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	200 V	500mA	1.25 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
FR502GP-AP	Micro Commercial Co	DIODE GEN PURP 100V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	100 V	5A	1.35 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 100 V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
PMEG150G20ELPX	Nexperia USA Inc.	DIODE SIGE 150V 2A SOD128/CFP5 Diode Type: SiGe (Silicon Germanium) Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Current - Reverse Leakage @ Vr: 30 nA @ 150 V Capacitance @ Vr, F: 70pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C	패키지: -	재고8,763	150 V	2A	850 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	14 ns	30 nA @ 150 V	70pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C
SFAF504GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000	200 V	5A	975 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
B320CE-13	Diodes Incorporated	DIODE SCHOTTKY 20V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 20 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	20 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 20 V	140pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
NC1D120C30KTNG	NextGen Components	SiC Schottky 1200V 30A TO247- 2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 85 µA @ 1200 V Capacitance @ Vr, F: 2125pF @ 0.1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2L Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	Request a Quote	1200 V	30A	1.6 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	85 µA @ 1200 V	2125pF @ 0.1V, 1MHz	Through Hole	TO-247-2	TO-247-2L	-55°C ~ 175°C
CD214C-S3M	Bourns Inc.	DIODE GEN PURP 1KV 3A 2SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	1000 V	3A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	-	Surface Mount	2-SMD, No Lead	2-SMD	-65°C ~ 175°C
SBRS5654T3G	onsemi	DIODE SCHOTTKY SMB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
VS-8ETH06STRL-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	600 V	8A	2.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	50 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
SDURB830	SMC Diode Solutions	DIODE GEN PURP 300V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고2,052	300 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 300 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
BAT54W-HE3_A-08	Vishay	SCHOTTKY DIODE SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 125°C	패키지: -	Request a Quote	30 V	200mA	800 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	125°C
SM165KE800G2	SMC Diode Solutions	DIODE GEN PURP 800V 165A T2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 165A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 165 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: T2 Operating Temperature - Junction: -40°C ~ 150°C	패키지: -	재고216	800 V	165A	1.25 V @ 165 A	Standard Recovery >500ns, > 200mA (Io)	-	20 µA @ 800 V	-	Chassis Mount	Module	T2	-40°C ~ 150°C
MSASC100W45H	Microchip Technology	DIODE SCHOTTKY 45V 100A THINKEY2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 80 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™2 Supplier Device Package: ThinKey™2 Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	45 V	100A	800 mV @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™2	ThinKey™2	-65°C ~ 175°C

1N4004GP-M3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,312

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-50°C ~ 150°C

VS-30WQ10FNTRRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 3.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고6,048

100V

3.5A

810mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

92pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

VS-10TQ035-N3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A TO-220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 40V
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고5,392

35V

10A

570mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 40V

900pF @ 5V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

MBRF2090HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고7,600

90V

20A

950mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

BYT56D-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 3A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-64, Axial

재고2,800

200V

3A

1.4V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

5µA @ 200V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

MUR320SBHM4G

TSC America Inc.

DIODE, ULTRA FAST, 3A, 200V, 25N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AA, SMB

재고2,320

200V

3A

900mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 200V

45pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

S3D-M3/57T

Vishay Semiconductor Diodes Division

DIODE GPP 3A 200V DO-214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고6,288

200V

3A

1.15V @ 2.5A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 200V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

S5A-M3/9AT

Vishay Semiconductor Diodes Division

DIODE GPP 5A 50V DO-214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고5,056

50V

5A

1.15V @ 5A

Standard Recovery >500ns, > 200mA (Io)

2.5µs

10µA @ 50V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

AM01V0

Sanken

DIODE GEN PURP 400V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고3,488

400V

1A

980mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

BAT43W-HE3-18

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)

패키지: SOD-123

재고7,680

30V

200mA (DC)

450mV @ 15mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

7pF @ 1V, 1MHz

Surface Mount

SOD-123

125°C (Max)

SS110LHRQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고3,424

100V

1A

800mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 100V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RS1ML RHG

TSC America Inc.

DIODE, FAST, 0.8A, 1000V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고3,488

-

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

PR1002-T

Diodes Incorporated

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,728

100V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 100V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

LS4151-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 300MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 50nA @ 50V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-80 Variant
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 175°C (Max)

패키지: SOD-80 Variant

재고4,064

50V

300mA

1V @ 50mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

50nA @ 50V

2pF @ 0V, 1MHz

Surface Mount

SOD-80 Variant

SOD-80 QuadroMELF

175°C (Max)

AU1PM-M3/84A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1000V 1A DO220AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-220AA

재고348,000

1000V

1A

1.85V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

1µA @ 1000V

7.5pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

VS-HFA30PB120PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 30A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 4.1V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170ns
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-247-2

재고8,844

1200V

30A

4.1V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

170ns

40µA @ 1200V

-

Through Hole

TO-247-2

TO-247AC Modified

-55°C ~ 150°C

B5817WSHE3-TP

Micro Commercial Co

DIODE SCHOTTKY 20V 1A SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

재고5,166

20 V

1A

450 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 20 V

120pF @ 4V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 125°C

BYM07-200HE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GP 200V 500MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

200 V

500mA

1.25 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

7pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

FR502GP-AP

Micro Commercial Co

DIODE GEN PURP 100V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

100 V

5A

1.35 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

10 µA @ 100 V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

PMEG150G20ELPX

Nexperia USA Inc.

DIODE SIGE 150V 2A SOD128/CFP5

Diode Type: SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C

패키지: -

재고8,763

150 V

2A

850 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

14 ns

30 nA @ 150 V

70pF @ 1V, 1MHz

Surface Mount

SOD-128

SOD-128/CFP5

175°C

SFAF504GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고3,000

200 V

5A

975 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

70pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

B320CE-13

Diodes Incorporated

DIODE SCHOTTKY 20V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

20 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 20 V

140pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

NC1D120C30KTNG

NextGen Components

SiC Schottky 1200V 30A TO247- 2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 85 µA @ 1200 V
Capacitance @ Vr, F: 2125pF @ 0.1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2L
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

Request a Quote

1200 V

30A

1.6 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

85 µA @ 1200 V

2125pF @ 0.1V, 1MHz

Through Hole

TO-247-2

TO-247-2L

-55°C ~ 175°C

CD214C-S3M

Bourns Inc.

DIODE GEN PURP 1KV 3A 2SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -65°C ~ 175°C

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1000 V

3A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

-

Surface Mount

2-SMD, No Lead

2-SMD

-65°C ~ 175°C

SBRS5654T3G

onsemi

DIODE SCHOTTKY SMB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

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-

VS-8ETH06STRL-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

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600 V

8A

2.4 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

50 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

SDURB830

SMC Diode Solutions

DIODE GEN PURP 300V 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

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재고2,052

300 V

8A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

10 µA @ 300 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

BAT54W-HE3_A-08

Vishay

SCHOTTKY DIODE SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C

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30 V

200mA

800 mV @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 1V, 1MHz

Surface Mount

SOD-123

125°C

SM165KE800G2

SMC Diode Solutions

DIODE GEN PURP 800V 165A T2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 165A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 165 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: T2
Operating Temperature - Junction: -40°C ~ 150°C

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재고216

800 V

165A

1.25 V @ 165 A

Standard Recovery >500ns, > 200mA (Io)

-

20 µA @ 800 V

-

Chassis Mount

Module

T2

-40°C ~ 150°C

MSASC100W45H

Microchip Technology

DIODE SCHOTTKY 45V 100A THINKEY2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 80 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™2
Supplier Device Package: ThinKey™2
Operating Temperature - Junction: -65°C ~ 175°C

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45 V

100A

800 mV @ 80 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

ThinKey™2

-65°C ~ 175°C