페이지 833 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
NTSB40200CTG	ON Semiconductor	DIODE SCHOTTKY 200V 20A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,464	200V	20A	1.45V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
MBRB10H35-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 850mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,872	35V	10A	850mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
HS18230	Microsemi Corporation	DIODE MODULE 30V 180A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 180A Voltage - Forward (Vf) (Max) @ If: 550mV @ 180A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 30V Capacitance @ Vr, F: 7000pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: HALF-PAK Operating Temperature - Junction: -	패키지: HALF-PAK	재고7,152	30V	180A	550mV @ 180A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 30V	7000pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
MA2J1160GL	Panasonic Electronic Components	DIODE GEN PURP 40V 100MA SMINI2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 10nA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SMini2-F3 Operating Temperature - Junction: 150°C (Max)	패키지: SC-90, SOD-323F	재고7,456	40V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	100ns	10nA @ 40V	-	Surface Mount	SC-90, SOD-323F	SMini2-F3	150°C (Max)
D4015L52	Littelfuse Inc.	DIODE GEN PURP 400V 9.5A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 9.5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab, Formed Leads Supplier Device Package: TO-220 Isolated Tab Operating Temperature - Junction: -40°C ~ 125°C	패키지: TO-220-3 Isolated Tab, Formed Leads	재고3,952	400V	9.5A	1.6V @ 9.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	10µA @ 400V	-	Through Hole	TO-220-3 Isolated Tab, Formed Leads	TO-220 Isolated Tab	-40°C ~ 125°C
RA202220XX	Powerex Inc.	DIODE MODULE 2.2KV 2000A PWRDISC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 2000A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 200mA @ 2200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AD Supplier Device Package: Pow-R-Disc Operating Temperature - Junction: -	패키지: DO-200AD	재고7,904	2200V	2000A	1.45V @ 3000A	Standard Recovery >500ns, > 200mA (Io)	25µs	200mA @ 2200V	-	Chassis Mount	DO-200AD	Pow-R-Disc	-
VS-SD300C16C	Vishay Semiconductor Diodes Division	DIODE MODULE 1.6KV 650A D200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 650A Voltage - Forward (Vf) (Max) @ If: 2.08V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, PUK Operating Temperature - Junction: -	패키지: DO-200AA, A-PUK	재고7,680	1600V	650A	2.08V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 1600V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, PUK	-
JANTXV1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 200°C	패키지: A, Axial	재고3,904	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
VS-87HFR80	Vishay Semiconductor Diodes Division	DIODE GENERAL PURPOSE 85A DO-5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고3,376	800V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
FR20G02	GeneSiC Semiconductor	DIODE GEN PURP 400V 20A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고6,912	400V	20A	1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
DHG60I1200HA	IXYS	DIODE GEN PURP 1.2KV 60A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.32V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 125µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-247-3	재고7,040	1200V	60A	2.32V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	125µA @ 1200V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 150°C
UGF5JHC0G	TSC America Inc.	DIODE, ULTRA FAST, 5A, 600V, 25N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 30µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-220-2 Full Pack	재고6,752	600V	5A	3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
RM 2BV	Sanken	DIODE GEN PURP 800V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	패키지: Axial	재고5,840	800V	1.2A	910mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
PMEG100V060ELPDAZ	Nexperia USA Inc.	PMEG100V060ELPD/SOT1289/CFP15 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	재고7,792	-	-	-	-	-	-	-	-	-	-	-
ES3DB M4G	TSC America Inc.	DIODE, SUPER FAST, 3A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 46pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고3,744	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	46pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CDBC240SLR-HF	Comchip Technology	DIODE SCHOTTKY 40V 2A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 400mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -50°C ~ 150°C	패키지: DO-214AB, SMC	재고4,160	40V	2A (DC)	400mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-50°C ~ 150°C
B330LA-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고4,048	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
S5MS-M3/57T	Vishay Semiconductor Diodes Division	DIODE GP 1KV 1.6A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 3µA @ 1000V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고6,208	1000V	1.6A (DC)	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	3µA @ 1000V	11pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SK33AHR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고4,096	30V	3A	550mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RGL41G/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-213AB, MELF (Glass)	재고2,576	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
HT15G A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 400V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: T-18, Axial	재고4,176	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
US1M-M3/5AT	Vishay Semiconductor Diodes Division	DIODE 1A 1000V 75NS DO-214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고179,508	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 1000V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS1P4-M3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 40V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고7,808	40V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	70pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
TSOD1F4HM RVG	TSC America Inc.	DIODE, FAST, 1A, 400V, 150NS, SO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: SOD-123F	재고6,288	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
HER104G R0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 300V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,888	300V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GSD2004WS-E3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 240V 225MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 240V Current - Average Rectified (Io): 225mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 240V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C (Max)	패키지: SC-76, SOD-323	재고2,208	240V	225mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 240V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C (Max)
RF2001T4S	Rohm Semiconductor	DIODE GEN PURP 400V 20A TO220FN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FN Operating Temperature - Junction: 150°C (Max)	패키지: TO-220-3 Full Pack	재고9,684	400V	20A	1.6V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 400V	-	Through Hole	TO-220-3 Full Pack	TO-220FN	150°C (Max)
VS-60EPF12-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-247-2	재고7,248	1200V	60A	1.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	480ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
MURS105T3G	ON Semiconductor	DIODE GEN PURP 50V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AA, SMB	재고792,120	50V	2A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 50V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
CTS520,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 16pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max)	패키지: SOD-882	재고187,992	30V	200mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 30V	16pF @ 0V, 1MHz	Surface Mount	SOD-882	CST2	125°C (Max)

NTSB40200CTG

ON Semiconductor

DIODE SCHOTTKY 200V 20A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,464

200V

20A

1.45V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

MBRB10H35-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,872

35V

10A

850mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

HS18230

Microsemi Corporation

DIODE MODULE 30V 180A HALF-PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 180A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 180A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 30V
Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: HALF-PAK
Operating Temperature - Junction: -

패키지: HALF-PAK

재고7,152

30V

180A

550mV @ 180A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 30V

7000pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

-

MA2J1160GL

Panasonic Electronic Components

DIODE GEN PURP 40V 100MA SMINI2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 10nA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: SMini2-F3
Operating Temperature - Junction: 150°C (Max)

패키지: SC-90, SOD-323F

재고7,456

40V

100mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

100ns

10nA @ 40V

-

Surface Mount

SC-90, SOD-323F

SMini2-F3

150°C (Max)

D4015L52

Littelfuse Inc.

DIODE GEN PURP 400V 9.5A TO220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 9.5A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab, Formed Leads
Supplier Device Package: TO-220 Isolated Tab
Operating Temperature - Junction: -40°C ~ 125°C

패키지: TO-220-3 Isolated Tab, Formed Leads

재고3,952

400V

9.5A

1.6V @ 9.5A

Standard Recovery >500ns, > 200mA (Io)

4µs

10µA @ 400V

-

Through Hole

TO-220-3 Isolated Tab, Formed Leads

TO-220 Isolated Tab

-40°C ~ 125°C

RA202220XX

Powerex Inc.

DIODE MODULE 2.2KV 2000A PWRDISC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 2000A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 200mA @ 2200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AD
Supplier Device Package: Pow-R-Disc
Operating Temperature - Junction: -

패키지: DO-200AD

재고7,904

2200V

2000A

1.45V @ 3000A

Standard Recovery >500ns, > 200mA (Io)

25µs

200mA @ 2200V

-

Chassis Mount

DO-200AD

Pow-R-Disc

-

VS-SD300C16C

Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 650A D200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 650A
Voltage - Forward (Vf) (Max) @ If: 2.08V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, PUK
Operating Temperature - Junction: -

패키지: DO-200AA, A-PUK

재고7,680

1600V

650A

2.08V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

-

15mA @ 1600V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, PUK

-

JANTXV1N5614

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 200°C

패키지: A, Axial

재고3,904

200V

1A

1.3V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

500nA @ 200V

-

Through Hole

A, Axial

-

-65°C ~ 200°C

VS-87HFR80

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고3,376

800V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

FR20G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 20A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고6,912

400V

20A

1V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

25µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

DHG60I1200HA

IXYS

DIODE GEN PURP 1.2KV 60A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 2.32V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 125µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-247-3

재고7,040

1200V

60A

2.32V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

125µA @ 1200V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 150°C

UGF5JHC0G

TSC America Inc.

DIODE, ULTRA FAST, 5A, 600V, 25N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 3V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 30µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack

재고6,752

600V

5A

3V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

30µA @ 600V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

RM 2BV

Sanken

DIODE GEN PURP 800V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

패키지: Axial

재고5,840

800V

1.2A

910mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

-

Through Hole

Axial

-40°C ~ 150°C

PMEG100V060ELPDAZ

Nexperia USA Inc.

PMEG100V060ELPD/SOT1289/CFP15

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

재고7,792

-

ES3DB M4G

TSC America Inc.

DIODE, SUPER FAST, 3A, 200V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 46pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고3,744

200V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

46pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

CDBC240SLR-HF

Comchip Technology

DIODE SCHOTTKY 40V 2A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 400mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -50°C ~ 150°C

패키지: DO-214AB, SMC

재고4,160

40V

2A (DC)

400mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

30pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-50°C ~ 150°C

B330LA-M3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고4,048

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

S5MS-M3/57T

Vishay Semiconductor Diodes Division

DIODE GP 1KV 1.6A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 1000V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고6,208

1000V

1.6A (DC)

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

3µA @ 1000V

11pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SK33AHR3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고4,096

30V

3A

550mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

RGL41G/1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

재고2,576

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

HT15G A0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 400V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

패키지: T-18, Axial

재고4,176

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

US1M-M3/5AT

Vishay Semiconductor Diodes Division

DIODE 1A 1000V 75NS DO-214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고179,508

1000V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 1000V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SS1P4-M3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 40V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고7,808

40V

1A

530mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 40V

70pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

TSOD1F4HM RVG

TSC America Inc.

DIODE, FAST, 1A, 400V, 150NS, SO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SOD-123F

재고6,288

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

4pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

HER104G R0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 300V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,888

300V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

GSD2004WS-E3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 240V 225MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 240V
Current - Average Rectified (Io): 225mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 240V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)

패키지: SC-76, SOD-323

재고2,208

240V

225mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 240V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C (Max)

RF2001T4S

Rohm Semiconductor

DIODE GEN PURP 400V 20A TO220FN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FN
Operating Temperature - Junction: 150°C (Max)

패키지: TO-220-3 Full Pack

재고9,684

400V

20A

1.6V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

10µA @ 400V

-

Through Hole

TO-220-3 Full Pack

TO-220FN

150°C (Max)

VS-60EPF12-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 60A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-247-2

재고7,248

1200V

60A

1.4V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

480ns

100µA @ 1200V

-

Through Hole

TO-247-2

TO-247AC Modified

-40°C ~ 150°C

MURS105T3G

ON Semiconductor

DIODE GEN PURP 50V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AA, SMB

재고792,120

50V

2A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 50V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

CTS520,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA CST2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)

패키지: SOD-882

재고187,992

30V

200mA

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 30V

16pF @ 0V, 1MHz

Surface Mount

SOD-882

CST2

125°C (Max)