페이지 74 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CDBMH250-HF	Comchip Technology	DIODE SCHOTTKY 50V 2A SOD123T Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 50V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123T Operating Temperature - Junction: -55°C ~ 150°C	패키지: SOD-123T	재고3,856	50V	2A (DC)	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	160pF @ 4V, 1MHz	Surface Mount	SOD-123T	SOD-123T	-55°C ~ 150°C
ES1PCHE3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고3,504	150V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
SD830-T	Diodes Incorporated	DIODE SCHOTTKY 30V 8A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고6,416	30V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
RURP15100	Fairchild/ON Semiconductor	DIODE GEN PURP 1KV 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-220-2	재고10,644	1000V	15A	1.8V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	125ns	100µA @ 1000V	-	Through Hole	TO-220-2	TO-220-2L	-65°C ~ 175°C
VS-8AF2NPP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 50A B47 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-47 Supplier Device Package: B-47 Operating Temperature - Junction: -65°C ~ 195°C	패키지: B-47	재고3,232	200V	50A	-	Standard Recovery >500ns, > 200mA (Io)	-	5mA @ 200V	-	Chassis, Stud Mount	B-47	B-47	-65°C ~ 195°C
10TQ035STRL	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 10A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고2,544	35V	10A	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
R9G01422XX	Powerex Inc.	DIODE MODULE 1.4KV 2200A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 2200A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 15µs Current - Reverse Leakage @ Vr: 150mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	패키지: DO-200AB, B-PUK	재고5,264	1400V	2200A	1.1V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	15µs	150mA @ 1400V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
JANTXV1N1184R	Microsemi Corporation	DIODE GEN PURP 100V 35A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-203AB, DO-5, Stud	재고2,272	100V	35A	1.4V @ 110A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
R6200250XXOO	Powerex Inc.	DIODE MODULE 200V 500A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -	패키지: DO-200AA, A-PUK	재고5,648	200V	500A	1.4V @ 800A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 200V	-	Chassis Mount	DO-200AA, A-PUK	DO-200AA, R62	-
VS-6FL40S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 6A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-203AA, DO-4, Stud	재고5,312	400V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	50µA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
DSEP15-06A	IXYS	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.04V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고10,728	600V	15A	2.04V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	100µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
CMR3U-02M BK	Central Semiconductor Corp	DIODE GEN PURP 200V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	패키지: DO-214AA, SMB	재고5,376	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
LSM335G/TR13	Microsemi Corporation	DIODE SCHOTTKY 35V 3A DO215AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-215AB, SMC Gull Wing	재고4,272	35V	3A	520mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 35V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 150°C
V20120SGHM3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 120V TO-220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 120V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-3	재고3,968	120V	20A	1.33V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 120V	-	Through Hole	TO-220-3	TO-220AB	-40°C ~ 150°C
VS-6ESH01-M3/87A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 6A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 940mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 22ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -65°C ~ 175°C	패키지: TO-277, 3-PowerDFN	재고4,464	100V	6A	940mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	22ns	2µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-65°C ~ 175°C
RS3BHR7G	TSC America Inc.	DIODE, FAST, 3A, 100V, 150NS, AE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AB, SMC	재고4,768	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
SL22-M3/52T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 2A 20V DO-214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 440mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	패키지: DO-214AA, SMB	재고4,080	20V	2A	440mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
GP10YE-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.6KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1600V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고3,632	1600V	1A	1.3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1600V	5pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
RS1GL RUG	TSC America Inc.	DIODE, FAST, 0.8A, 400V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고5,520	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
TSOD1F2HM RVG	TSC America Inc.	DIODE, FAST, 1A, 200V, 150NS, SO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: SOD-123F	재고5,728	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
RS1ML MHG	TSC America Inc.	DIODE, FAST, 0.8A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-219AB	재고2,048	-	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1BL MTG	TSC America Inc.	DIODE, 1A, 100V, SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	패키지: DO-219AB	재고4,176	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
M1MA151KT1G	ON Semiconductor	DIODE GEN PURP 40V 100MA SC59 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 35V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SC-59 Operating Temperature - Junction: 150°C (Max)	패키지: TO-236-3, SC-59, SOT-23-3	재고360,000	40V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 35V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SC-59	150°C (Max)
S2JA R3G	TSC America Inc.	DIODE, 1.5A, 600V, DO-214AC (SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AC, SMA	재고2,800	600V	1.5A	1.1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MBRAF440T3G	ON Semiconductor	DIODE SCHOTTKY 40V 4A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 485mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMA-FL Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-221AC, SMA Flat Leads	재고262,920	40V	4A	485mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 40V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMA-FL	-55°C ~ 150°C
BAT41	STMicroelectronics	DIODE SCHOTTKY 100V 100MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-204AH, DO-35, Axial	재고415,200	100V	100mA (DC)	450mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 50V	2pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
VS-1N3673A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 200°C	패키지: DO-203AA, DO-4, Stud	재고5,104	1000V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	600µA @ 1000V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
CMMR1-06 TR	Central Semiconductor Corp	DIODE GEN PURP 600V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -65°C ~ 150°C	패키지: SOD-123F	재고5,936	600V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	6pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C
B130-E3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C	패키지: DO-214AC, SMA	재고6,416	30V	1A	520mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 125°C
BAV20WS-7-F	Diodes Incorporated	DIODE GEN PURP 150V 200MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C	패키지: SC-76, SOD-323	재고6,635,028	150V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-65°C ~ 150°C

CDBMH250-HF

Comchip Technology

DIODE SCHOTTKY 50V 2A SOD123T

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 50V
Capacitance @ Vr, F: 160pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: SOD-123T
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SOD-123T

재고3,856

50V

2A (DC)

700mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 50V

160pF @ 4V, 1MHz

Surface Mount

SOD-123T

-55°C ~ 150°C

ES1PCHE3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고3,504

150V

1A

920mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 150V

10pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

SD830-T

Diodes Incorporated

DIODE SCHOTTKY 30V 8A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고6,416

30V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

RURP15100

Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 125ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2

재고10,644

1000V

15A

1.8V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

125ns

100µA @ 1000V

-

Through Hole

TO-220-2

TO-220-2L

-65°C ~ 175°C

VS-8AF2NPP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 50A B47

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-47
Supplier Device Package: B-47
Operating Temperature - Junction: -65°C ~ 195°C

패키지: B-47

재고3,232

200V

50A

-

Standard Recovery >500ns, > 200mA (Io)

-

5mA @ 200V

-

Chassis, Stud Mount

B-47

-65°C ~ 195°C

10TQ035STRL

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고2,544

35V

10A

570mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

R9G01422XX

Powerex Inc.

DIODE MODULE 1.4KV 2200A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 2200A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15µs
Current - Reverse Leakage @ Vr: 150mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

패키지: DO-200AB, B-PUK

재고5,264

1400V

2200A

1.1V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

15µs

150mA @ 1400V

-

Chassis Mount

DO-200AB, B-PUK

-

JANTXV1N1184R

Microsemi Corporation

DIODE GEN PURP 100V 35A DO203AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 110A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-203AB, DO-5, Stud

재고2,272

100V

35A

1.4V @ 110A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 175°C

R6200250XXOO

Powerex Inc.

DIODE MODULE 200V 500A DO200AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 800A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11µs
Current - Reverse Leakage @ Vr: 50mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -

패키지: DO-200AA, A-PUK

재고5,648

200V

500A

1.4V @ 800A

Standard Recovery >500ns, > 200mA (Io)

11µs

50mA @ 200V

-

Chassis Mount

DO-200AA, A-PUK

DO-200AA, R62

-

VS-6FL40S02

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 6A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AA, DO-4, Stud

재고5,312

400V

6A

1.4V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

50µA @ 400V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 150°C

DSEP15-06A

IXYS

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.04V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고10,728

600V

15A

2.04V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

100µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

CMR3U-02M BK

Central Semiconductor Corp

DIODE GEN PURP 200V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-214AA, SMB

재고5,376

200V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

LSM335G/TR13

Microsemi Corporation

DIODE SCHOTTKY 35V 3A DO215AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-215AB, SMC Gull Wing

재고4,272

35V

3A

520mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 35V

-

Surface Mount

DO-215AB, SMC Gull Wing

DO-215AB

-55°C ~ 150°C

V20120SGHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 120V TO-220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-3

재고3,968

120V

20A

1.33V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 120V

-

Through Hole

TO-220-3

TO-220AB

-40°C ~ 150°C

VS-6ESH01-M3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 6A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 940mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-277, 3-PowerDFN

재고4,464

100V

6A

940mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

22ns

2µA @ 100V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-65°C ~ 175°C

RS3BHR7G

TSC America Inc.

DIODE, FAST, 3A, 100V, 150NS, AE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

재고4,768

100V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

10µA @ 100V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

SL22-M3/52T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 2A 20V DO-214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 440mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AA, SMB

재고4,080

20V

2A

440mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 20V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

GP10YE-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 1600V
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고3,632

1600V

1A

1.3V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 1600V

5pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

RS1GL RUG

TSC America Inc.

DIODE, FAST, 0.8A, 400V, 150NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고5,520

400V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

TSOD1F2HM RVG

TSC America Inc.

DIODE, FAST, 1A, 200V, 150NS, SO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: SOD-123F

재고5,728

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

4pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 150°C

RS1ML MHG

TSC America Inc.

DIODE, FAST, 0.8A, 1000V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-219AB

재고2,048

-

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

S1BL MTG

TSC America Inc.

DIODE, 1A, 100V, SUB SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

재고4,176

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 100V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

M1MA151KT1G

ON Semiconductor

DIODE GEN PURP 40V 100MA SC59

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 100nA @ 35V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

재고360,000

40V

100mA (DC)

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

3ns

100nA @ 35V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SC-59

150°C (Max)

S2JA R3G

TSC America Inc.

DIODE, 1.5A, 600V, DO-214AC (SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

재고2,800

600V

1.5A

1.1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

1.5µs

5µA @ 600V

30pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

MBRAF440T3G

ON Semiconductor

DIODE SCHOTTKY 40V 4A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 485mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMA-FL
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-221AC, SMA Flat Leads

재고262,920

40V

4A

485mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 40V

-

Surface Mount

DO-221AC, SMA Flat Leads

SMA-FL

-55°C ~ 150°C

BAT41

STMicroelectronics

DIODE SCHOTTKY 100V 100MA DO35

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 100mA (DC)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-204AH, DO-35, Axial

재고415,200

100V

100mA (DC)

450mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

-

100nA @ 50V

2pF @ 1V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 125°C

VS-1N3673A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-203AA, DO-4, Stud

재고5,104

1000V

12A

1.35V @ 12A

Standard Recovery >500ns, > 200mA (Io)

-

600µA @ 1000V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 200°C

CMMR1-06 TR

Central Semiconductor Corp

DIODE GEN PURP 600V 1A SOD123F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -65°C ~ 150°C

패키지: SOD-123F

재고5,936

600V

1A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 600V

6pF @ 4V, 1MHz

Surface Mount

SOD-123F

-65°C ~ 150°C

B130-E3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C

패키지: DO-214AC, SMA

재고6,416

30V

1A

520mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 125°C

BAV20WS-7-F

Diodes Incorporated

DIODE GEN PURP 150V 200MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C

패키지: SC-76, SOD-323

재고6,635,028

150V

200mA

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 150V

5pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-65°C ~ 150°C