페이지 1567 - 다이오드 - 정류기 - 단일 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RJU6052SDPD-E0#J2	Renesas Electronics America	DIODE GEN PURP 600V 20A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,328	600V	20A	3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	-55°C ~ 150°C
VS-8EWS08STRRPBF	Vishay Semiconductor Diodes Division	DIODE RECTIFIER 800V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,384	800V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-55°C ~ 150°C
MBRF16H45HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 16A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -65°C ~ 150°C	패키지: TO-220-2 Full Pack, Isolated Tab	재고3,824	45V	16A	660mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-65°C ~ 150°C
S1PJHE3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-220AA	재고7,408	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 600V	6pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
1N5399-T	Diodes Incorporated	DIODE GEN PURP 1KV 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-204AC, DO-15, Axial	재고6,880	1000V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
60HFU-200	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 60A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	패키지: DO-203AB, DO-5, Stud	재고5,152	200V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	50µA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
10BQ040	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-214AA, SMB	재고610,800	40V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
VS-85HFR140M	Vishay Semiconductor Diodes Division	DIODE STD REC 85A DO-5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	패키지: DO-203AB, DO-5, Stud	재고7,344	1400V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
VS-80PFR140	Vishay Semiconductor Diodes Division	DIODE STD REC 80A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-203AB, DO-5, Stud	재고7,408	1400V	80A	1.46V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-55°C ~ 150°C
VS-20ETF02FPPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 20A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 160ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220AC Full Pack Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-220-2 Full Pack	재고4,192	200V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	160ns	100µA @ 200V	-	Through Hole	TO-220-2 Full Pack	TO-220AC Full Pack	-40°C ~ 150°C
VS-30WQ06FN-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 60V Capacitance @ Vr, F: 145pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Operating Temperature - Junction: -40°C ~ 150°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고3,328	60V	3.5A	610mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 60V	145pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)	-40°C ~ 150°C
SB520A-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 500mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-201AD, Axial	재고3,440	20V	5A	500mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
BYS10-35-M3/TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 1.5A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고5,616	35V	1.5A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 35V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
B130-M3/61T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	패키지: DO-214AC, SMA	재고6,064	30V	1A	520mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
SR105 R1G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: DO-204AL, DO-41, Axial	재고7,040	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAT43W-7-F	Diodes Incorporated	DIODE SCHOTTKY 30V 200MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	패키지: SOD-123	재고373,200	30V	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
CSICD05-1200 TR13 PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 1.2KV 5A DPAK Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 190µA @ 1200V Capacitance @ Vr, F: 240pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,552	1200V	5A	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	190µA @ 1200V	240pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C
S3KHE3-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	800 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
D740N44TXPSA1	Infineon Technologies	DIODE GEN PURP 4.4KV 750A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4400 V Current - Average Rectified (Io): 750A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 mA @ 4400 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	패키지: -	Request a Quote	4400 V	750A	1.45 V @ 700 A	Standard Recovery >500ns, > 200mA (Io)	-	70 mA @ 4400 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 160°C
S4PDHM3_B-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	200 V	4A	1.1 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	10 µA @ 200 V	30pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
S4380	Microchip Technology	DIODE GEN PURP 800V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	패키지: -	Request a Quote	800 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 800 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
HS3M-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	1000 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 1000 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
PNE20020ER-QX	Nexperia USA Inc.	HYPERFAST/ULTRAFAST RECOVERY REC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 200 nA @ 200 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	패키지: -	재고8,940	200 V	2A	980 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	200 nA @ 200 V	17pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
US1D-A	ANBON SEMICONDUCTOR (INT'L) LIMITED	ULTRA FAST RECOVERY RECTIFIERS 2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA/DO-214AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고38,268	200 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA/DO-214AC	-55°C ~ 150°C
JANTX1N5806-TR	Semtech Corporation	DIODE GEN PURP 150V 2.5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 25pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C	패키지: -	Request a Quote	150 V	2.5A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 5V, 1MHz	Through Hole	Axial	Axial	-65°C ~ 175°C
SS16F	MDD	DIODE SCHOTTKY 60V 1A SMAF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 60 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote	60 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 60 V	80pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
VS-E5TX2106S2LHM3	Vishay General Semiconductor - Diodes Division	20A, 600V, "X" SERIES GEN 5 FRED Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 41 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고2,550	600 V	20A	2.31 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	41 ns	10 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 175°C
RB521S-309HKTE61	Rohm Semiconductor	DIODE SCHOTTKY SMD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

RJU6052SDPD-E0#J2

Renesas Electronics America

DIODE GEN PURP 600V 20A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 3V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,328

600V

20A

3V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-55°C ~ 150°C

VS-8EWS08STRRPBF

Vishay Semiconductor Diodes Division

DIODE RECTIFIER 800V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,384

800V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 800V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-55°C ~ 150°C

MBRF16H45HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

재고3,824

45V

16A

660mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-65°C ~ 150°C

S1PJHE3/84A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

재고7,408

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 600V

6pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

1N5399-T

Diodes Incorporated

DIODE GEN PURP 1KV 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

재고6,880

1000V

1.5A

1.1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

60HFU-200

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 60A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

재고5,152

200V

60A

1.3V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

80ns

50µA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

10BQ040

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

재고610,800

40V

1A

530mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

VS-85HFR140M

Vishay Semiconductor Diodes Division

DIODE STD REC 85A DO-5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

패키지: DO-203AB, DO-5, Stud

재고7,344

1400V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

VS-80PFR140

Vishay Semiconductor Diodes Division

DIODE STD REC 80A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-203AB, DO-5, Stud

재고7,408

1400V

80A

1.46V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-55°C ~ 150°C

VS-20ETF02FPPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 20A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220AC Full Pack
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2 Full Pack

재고4,192

200V

20A

1.3V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

160ns

100µA @ 200V

-

Through Hole

TO-220-2 Full Pack

TO-220AC Full Pack

-40°C ~ 150°C

VS-30WQ06FN-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 610mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 60V
Capacitance @ Vr, F: 145pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고3,328

60V

3.5A

610mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2µA @ 60V

145pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252, (D-Pak)

-40°C ~ 150°C

SB520A-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

재고3,440

20V

5A

500mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

BYS10-35-M3/TR

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 1.5A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고5,616

35V

1.5A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 35V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

B130-M3/61T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

재고6,064

30V

1A

520mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 30V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

SR105 R1G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

재고7,040

50V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

BAT43W-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 500nA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

패키지: SOD-123

재고373,200

30V

200mA (DC)

1V @ 200mA

Small Signal =< 200mA (Io), Any Speed

5ns

500nA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C

CSICD05-1200 TR13 PBFREE

Central Semiconductor Corp

DIODE SCHOTTKY 1.2KV 5A DPAK

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 190µA @ 1200V
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,552

1200V

5A

1.7V @ 5A

No Recovery Time > 500mA (Io)

0ns

190µA @ 1200V

240pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-55°C ~ 175°C

S3KHE3-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

800 V

3A

1.2 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

60pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

D740N44TXPSA1

Infineon Technologies

DIODE GEN PURP 4.4KV 750A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4400 V
Current - Average Rectified (Io): 750A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 mA @ 4400 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

패키지: -

Request a Quote

4400 V

750A

1.45 V @ 700 A

Standard Recovery >500ns, > 200mA (Io)

-

70 mA @ 4400 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 160°C

S4PDHM3_B-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 4A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

200 V

4A

1.1 V @ 4 A

Standard Recovery >500ns, > 200mA (Io)

2.5 µs

10 µA @ 200 V

30pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 150°C

S4380

Microchip Technology

DIODE GEN PURP 800V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

패키지: -

Request a Quote

800 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 800 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

HS3M-V7G

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1000 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 1000 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

PNE20020ER-QX

Nexperia USA Inc.

HYPERFAST/ULTRAFAST RECOVERY REC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C

패키지: -

재고8,940

200 V

2A

980 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

200 nA @ 200 V

17pF @ 4V, 1MHz

Surface Mount

SOD-123W

175°C

US1D-A

ANBON SEMICONDUCTOR (INT'L) LIMITED

ULTRA FAST RECOVERY RECTIFIERS 2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

재고38,268

200 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA/DO-214AC

-55°C ~ 150°C

JANTX1N5806-TR

Semtech Corporation

DIODE GEN PURP 150V 2.5A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C

패키지: -

Request a Quote

150 V

2.5A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 150 V

25pF @ 5V, 1MHz

Through Hole

Axial

-65°C ~ 175°C

SS16F

MDD

DIODE SCHOTTKY 60V 1A SMAF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 60 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

60 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 60 V

80pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF

-55°C ~ 150°C

VS-E5TX2106S2LHM3

Vishay General Semiconductor - Diodes Division

20A, 600V, "X" SERIES GEN 5 FRED

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2.31 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 41 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

재고2,550

600 V

20A

2.31 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

41 ns

10 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 175°C

RB521S-309HKTE61

Rohm Semiconductor

DIODE SCHOTTKY SMD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

패키지: -

Request a Quote

-