페이지 150 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
KBP206G-BP	Micro Commercial Co	IC BRIDGE RECT 2A 600V GBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBP Supplier Device Package: GBP	패키지: 4-SIP, GBP	재고7,776	Standard	600V	2A	1.1V @ 2A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBP	GBP
W02G	Diodes Incorporated	RECT BRIDGE 200V 1.5A GPP WOG Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOG Supplier Device Package: WOG	패키지: 4-Circular, WOG	재고50,604	Standard	200V	1.5A	1V @ 1.5A	5µA @ 200V	-65°C ~ 150°C (TJ)	Through Hole	4-Circular, WOG	WOG
GBJ1502	Diodes Incorporated	RECT BRIDGE GPP 200V 15A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고7,392	Standard	200V	15A	1.05V @ 7.5A	10µA @ 200V	-65°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
3SBMB05F	Semtech Corporation	BRIDGE RECT 3A 50V PCB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Current - Reverse Leakage @ Vr: 2µA @ 50V Operating Temperature: - Mounting Type: Through Hole Package / Case: 4-SIP Supplier Device Package: -	패키지: 4-SIP	재고6,240	Standard	50V	3A	1.1V @ 3A	2µA @ 50V	-	Through Hole	4-SIP	-
VUO62-18NO7	IXYS	RECT BRIDGE 3PH 63A 1800V PWS-D Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1800V Current - Average Rectified (Io): 63A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 1800V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: PWS-D Supplier Device Package: PWS-D	패키지: PWS-D	재고5,184	Standard	1800V	63A	1.8V @ 150A	300µA @ 1800V	-40°C ~ 150°C (TJ)	Chassis Mount	PWS-D	PWS-D
GBPC5002W	GeneSiC Semiconductor	DIODE BRIDGE 200V 50A GBPC-W Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, GBPC-W Supplier Device Package: GBPC-W	패키지: 4-Square, GBPC-W	재고6,736	Standard	200V	50A	1.2V @ 25A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
BR502L-G	Comchip Technology	RECTIFIER BRIDGE 200V 50A BR-L Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, with Heat Sink Supplier Device Package: BR-L	패키지: 4-SIP, with Heat Sink	재고3,264	Standard	200V	50A	1.1V @ 25A	10µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, with Heat Sink	BR-L
TS10P05G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 10A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고3,072	Standard	600V	10A	1.1V @ 10A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
BU1208-E3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 800V 12A BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 3.4A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고3,584	Standard	800V	3.4A	1.05V @ 6A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
KBJ410G	Diodes Incorporated	RECT BRIDGE GPP 4A 1000V KBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJ Supplier Device Package: KBJ	패키지: 4-SIP, KBJ	재고2,368	Standard	1000V	4A	1V @ 2A	5µA @ 1000V	-65°C ~ 150°C (TJ)	Through Hole	4-SIP, KBJ	KBJ
TS6P02G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 6A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고3,856	Standard	100V	6A	1.1V @ 6A	10µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, TS-6P	TS-6P
DF1501S	Diodes Incorporated	RECT BRIDGE 100V 1.5A Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DF-S	패키지: 4-SMD, Gull Wing	재고6,336	Standard	100V	1.5A	1.1V @ 1.5A	10µA @ 100V	-65°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	DF-S
GBU1006	Diodes Incorporated	RECT BRIDGE GPP 10A 600V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1V @ 5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고26,676	Standard	600V	10A	1V @ 5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GHXS010A060S-D1E	Global Power Technologies Group	MOD SBD BRIDGE 600V 10A SOT227 Diode Type: Single Phase Technology: Silicon Carbide Schottky Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Current - Reverse Leakage @ Vr: 100µA @ 600V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고7,792	Silicon Carbide Schottky	600V	10A	1.7V @ 10A	100µA @ 600V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
HBS610-13	Diodes Incorporated	MEDIUM/HIGH POWER BRIDGE HBS T&R Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: HBS	패키지: -	Request a Quote	Standard	1 kV	6 A	960 mV @ 6 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	HBS
KBJ610_T0_00601	Panjit International Inc.	KBJ PACKAGE, 6A/1000V STANDARD B Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBJ-2 Supplier Device Package: KBJ-2	패키지: -	재고29,859	Standard	1 kV	6 A	1.05 V @ 3 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBJ-2	KBJ-2
GBJA810-BP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: 4-SIP, JA Supplier Device Package: JA	패키지: -	Request a Quote	Standard	1 kV	8 A	1.1 V @ 4 A	5 µA @ 1000 V	-55°C ~ 150°C	Through Hole	4-SIP, JA	JA
MBL4S-TP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: MBLS-1	패키지: -	Request a Quote	Standard	400 V	500 mA	1 V @ 400 mA	10 µA @ 400 V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	MBLS-1
KBPF307G	Taiwan Semiconductor Corporation	3A, 1000V, STANDARD BRIDGE RECTI Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPF Supplier Device Package: KBPF	패키지: -	재고6,300	Standard	1 kV	3 A	1.1 V @ 1.5 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, KBPF	KBPF
GBJ5008-BP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 50 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: -	Request a Quote	Standard	800 V	50 A	1.1 V @ 25 A	10 µA @ 800 V	-55°C ~ 150°C	Through Hole	4-SIP, GBJ	GBJ
GBU15MS-BP	Micro Commercial Co	BRIDGE RECTIFIERS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	1 kV	15 A	1 V @ 7.5 A	5 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
GBI40W	Diotec Semiconductor	IC Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBI Supplier Device Package: GBI	패키지: -	Request a Quote	Standard	1.6 kV	6 A	1.1 V @ 20 A	5 µA @ 1600 V	-50°C ~ 150°C (TJ)	Through Hole	4-SIP, GBI	GBI
DBL151G	Taiwan Semiconductor Corporation	DIODE BRIDGE 1.5A 50V DBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 1.5 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: -	Request a Quote	Standard	50 V	1.5 A	1.1 V @ 1.5 A	2 µA @ 50 V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
GBJ25L08	Diodes Incorporated	MEDIUM/HIGH POWER BRIDGE GBJ TUB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 12.5 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: -	Request a Quote	Standard	800 V	25 A	900 mV @ 12.5 A	10 µA @ 800 V	-40°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
695-2	Microchip Technology	BRIDGE RECTIFIER Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: NC Supplier Device Package: NC	패키지: -	Request a Quote	Standard	200 V	15 A	1.2 V @ 2 A	5 µA @ 200 V	-65°C ~ 150°C (TJ)	Chassis Mount	NC	NC
GBL06L-5303E3-51	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 600V 3A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: -	Request a Quote	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
TBS22A-TP	Micro Commercial Co	Interface Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 2.2 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TBS	패키지: -	Request a Quote	Standard	50 V	2.2 A	950 mV @ 2 A	5 µA @ 50 V	-55°C ~ 150°C	Surface Mount	4-SMD, Flat Leads	4-TBS
BR1004	EIC SEMICONDUCTOR INC.	STD 10A, CASE TYPE: BR10 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Square, BR-10 Supplier Device Package: BR-10	패키지: -	Request a Quote	Standard	400 V	10 A	1.1 V @ 5 A	10 µA @ 400 V	-40°C ~ 150°C (TJ)	Through Hole	4-Square, BR-10	BR-10
GBJ1010_T0_00601	Panjit International Inc.	GBJ PACKAGE, 10A/1000V STANDARD Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ-2	패키지: -	재고4,602	Standard	1 kV	10 A	1.05 V @ 5 A	5 µA @ 1000 V	-55°C ~ 150°C	Through Hole	4-SIP, GBJ	GBJ-2
GBL06L-5308E3-51	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 600V 3A GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: -	Request a Quote	Standard	600 V	3 A	1 V @ 4 A	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL

KBP206G-BP

Micro Commercial Co

IC BRIDGE RECT 2A 600V GBP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBP
Supplier Device Package: GBP

패키지: 4-SIP, GBP

재고7,776

Standard

600V

2A

1.1V @ 2A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBP

GBP

W02G

Diodes Incorporated

RECT BRIDGE 200V 1.5A GPP WOG

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOG
Supplier Device Package: WOG

패키지: 4-Circular, WOG

재고50,604

Standard

200V

1.5A

1V @ 1.5A

5µA @ 200V

-65°C ~ 150°C (TJ)

Through Hole

4-Circular, WOG

WOG

GBJ1502

Diodes Incorporated

RECT BRIDGE GPP 200V 15A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고7,392

Standard

200V

15A

1.05V @ 7.5A

10µA @ 200V

-65°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

3SBMB05F

Semtech Corporation

BRIDGE RECT 3A 50V PCB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Reverse Leakage @ Vr: 2µA @ 50V
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 4-SIP
Supplier Device Package: -

패키지: 4-SIP

재고6,240

Standard

50V

3A

1.1V @ 3A

2µA @ 50V

-

Through Hole

4-SIP

-

VUO62-18NO7

IXYS

RECT BRIDGE 3PH 63A 1800V PWS-D

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1800V
Current - Average Rectified (Io): 63A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: PWS-D
Supplier Device Package: PWS-D

패키지: PWS-D

재고5,184

Standard

1800V

63A

1.8V @ 150A

300µA @ 1800V

-40°C ~ 150°C (TJ)

Chassis Mount

PWS-D

GBPC5002W

GeneSiC Semiconductor

DIODE BRIDGE 200V 50A GBPC-W

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 25A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, GBPC-W
Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

재고6,736

Standard

200V

50A

1.2V @ 25A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-Square, GBPC-W

GBPC-W

BR502L-G

Comchip Technology

RECTIFIER BRIDGE 200V 50A BR-L

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
Current - Reverse Leakage @ Vr: 10µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, with Heat Sink
Supplier Device Package: BR-L

패키지: 4-SIP, with Heat Sink

재고3,264

Standard

200V

50A

1.1V @ 25A

10µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, with Heat Sink

BR-L

TS10P05G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 10A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고3,072

Standard

600V

10A

1.1V @ 10A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

BU1208-E3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 12A BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 3.4A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고3,584

Standard

800V

3.4A

1.05V @ 6A

5µA @ 800V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

KBJ410G

Diodes Incorporated

RECT BRIDGE GPP 4A 1000V KBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ
Supplier Device Package: KBJ

패키지: 4-SIP, KBJ

재고2,368

Standard

1000V

4A

1V @ 2A

5µA @ 1000V

-65°C ~ 150°C (TJ)

Through Hole

4-SIP, KBJ

KBJ

TS6P02G C2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, TS-6P
Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

재고3,856

Standard

100V

6A

1.1V @ 6A

10µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, TS-6P

TS-6P

DF1501S

Diodes Incorporated

RECT BRIDGE 100V 1.5A

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: DF-S

패키지: 4-SMD, Gull Wing

재고6,336

Standard

100V

1.5A

1.1V @ 1.5A

10µA @ 100V

-65°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

DF-S

GBU1006

Diodes Incorporated

RECT BRIDGE GPP 10A 600V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1V @ 5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고26,676

Standard

600V

10A

1V @ 5A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GHXS010A060S-D1E

Global Power Technologies Group

MOD SBD BRIDGE 600V 10A SOT227

Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Current - Reverse Leakage @ Vr: 100µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고7,792

Silicon Carbide Schottky

600V

10A

1.7V @ 10A

100µA @ 600V

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

HBS610-13

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE HBS T&R

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: HBS

패키지: -

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Standard

1 kV

6 A

960 mV @ 6 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

HBS

KBJ610_T0_00601

Panjit International Inc.

KBJ PACKAGE, 6A/1000V STANDARD B

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBJ-2
Supplier Device Package: KBJ-2

패키지: -

재고29,859

Standard

1 kV

6 A

1.05 V @ 3 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBJ-2

KBJ-2

GBJA810-BP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: 4-SIP, JA
Supplier Device Package: JA

패키지: -

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Standard

1 kV

8 A

1.1 V @ 4 A

5 µA @ 1000 V

-55°C ~ 150°C

Through Hole

4-SIP, JA

JA

MBL4S-TP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: MBLS-1

패키지: -

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Standard

400 V

500 mA

1 V @ 400 mA

10 µA @ 400 V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

MBLS-1

KBPF307G

Taiwan Semiconductor Corporation

3A, 1000V, STANDARD BRIDGE RECTI

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPF
Supplier Device Package: KBPF

패키지: -

재고6,300

Standard

1 kV

3 A

1.1 V @ 1.5 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, KBPF

KBPF

GBJ5008-BP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: -

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Standard

800 V

50 A

1.1 V @ 25 A

10 µA @ 800 V

-55°C ~ 150°C

Through Hole

4-SIP, GBJ

GBJ

GBU15MS-BP

Micro Commercial Co

BRIDGE RECTIFIERS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

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Standard

1 kV

15 A

1 V @ 7.5 A

5 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

GBI40W

Diotec Semiconductor

IC

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBI
Supplier Device Package: GBI

패키지: -

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Standard

1.6 kV

6 A

1.1 V @ 20 A

5 µA @ 1600 V

-50°C ~ 150°C (TJ)

Through Hole

4-SIP, GBI

GBI

DBL151G

Taiwan Semiconductor Corporation

DIODE BRIDGE 1.5A 50V DBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: -

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Standard

50 V

1.5 A

1.1 V @ 1.5 A

2 µA @ 50 V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

GBJ25L08

Diodes Incorporated

MEDIUM/HIGH POWER BRIDGE GBJ TUB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: -

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Standard

800 V

25 A

900 mV @ 12.5 A

10 µA @ 800 V

-40°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

695-2

Microchip Technology

BRIDGE RECTIFIER

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: NC
Supplier Device Package: NC

패키지: -

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Standard

200 V

15 A

1.2 V @ 2 A

5 µA @ 200 V

-65°C ~ 150°C (TJ)

Chassis Mount

NC

GBL06L-5303E3-51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: -

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Standard

600 V

3 A

1 V @ 4 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

TBS22A-TP

Micro Commercial Co

Interface

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2.2 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TBS

패키지: -

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Standard

50 V

2.2 A

950 mV @ 2 A

5 µA @ 50 V

-55°C ~ 150°C

Surface Mount

4-SMD, Flat Leads

4-TBS

BR1004

EIC SEMICONDUCTOR INC.

STD 10A, CASE TYPE: BR10

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Square, BR-10
Supplier Device Package: BR-10

패키지: -

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Standard

400 V

10 A

1.1 V @ 5 A

10 µA @ 400 V

-40°C ~ 150°C (TJ)

Through Hole

4-Square, BR-10

BR-10

GBJ1010_T0_00601

Panjit International Inc.

GBJ PACKAGE, 10A/1000V STANDARD

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ-2

패키지: -

재고4,602

Standard

1 kV

10 A

1.05 V @ 5 A

5 µA @ 1000 V

-55°C ~ 150°C

Through Hole

4-SIP, GBJ

GBJ-2

GBL06L-5308E3-51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: -

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Standard

600 V

3 A

1 V @ 4 A

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL