페이지 146 - 다이오드 - 브리지 정류기 | 이산 소자 반도체 제품

부품 번호	제조업체	설명	패키지	재고	Technology	Voltage - Peak Reverse (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DBG150G	ON Semiconductor	DIODE BRIDGE 1PH 15A 600V 4SIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 3.6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 7.5A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, DBG Supplier Device Package: -	패키지: 4-SIP, DBG	재고6,608	Standard	600V	3.6A	900mV @ 7.5A	10µA @ 600V	150°C (TJ)	Through Hole	4-SIP, DBG	-
RM75TPM-2H	Powerex Inc.	DIODE 3-PHASE BRIDGE 1600V 150A Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1600V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A Current - Reverse Leakage @ Vr: 15mA @ 1600V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: Module	재고6,816	Standard	1600V	150A	1.3V @ 150A	15mA @ 1600V	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
2W04G	Diodes Incorporated	RECT BRIDGE GPP 2A 400V WOG Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOG Supplier Device Package: WOG	패키지: 4-Circular, WOG	재고51,468	Standard	400V	2A	1.1V @ 2A	5µA @ 400V	-65°C ~ 150°C (TJ)	Through Hole	4-Circular, WOG	WOG
MB351-F	Diodes Incorporated	RECTIFIER BRIDGE 100V 35A MB Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 17.5A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, MB Supplier Device Package: MB	패키지: 4-Square, MB	재고5,120	Standard	100V	35A	1.2V @ 17.5A	10µA @ 100V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, MB	MB
VUO30-08NO3	IXYS	RECT BRIDGE 3PH 37A 800V FO-F-B Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 37A Voltage - Forward (Vf) (Max) @ If: 2.55V @ 150A Current - Reverse Leakage @ Vr: 300µA @ 800V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Chassis Mount Package / Case: FO-F-B Supplier Device Package: FO-F-B	패키지: FO-F-B	재고5,504	Standard	800V	37A	2.55V @ 150A	300µA @ 800V	-40°C ~ 125°C (TJ)	Chassis Mount	FO-F-B	FO-F-B
VUO27-12NO7	IXYS	RECT BRIDGE 3PH 28A 1200V SLIM Diode Type: Three Phase Technology: Standard Voltage - Peak Reverse (Max): 1200V Current - Average Rectified (Io): 28A Voltage - Forward (Vf) (Max) @ If: 1.12V @ 7A Current - Reverse Leakage @ Vr: 300µA @ 1200V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Slim-PAC Supplier Device Package: Slim-PAC	패키지: Slim-PAC	재고3,520	Standard	1200V	28A	1.12V @ 7A	300µA @ 1200V	-40°C ~ 150°C (TJ)	Chassis Mount	Slim-PAC	Slim-PAC
BU25085S-E3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 800V 25A BU-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Supplier Device Package: isoCINK+? BU-5S	패키지: 4-SIP, BU-5S	재고2,320	Standard	800V	3.5A	1.05V @ 12.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU-5S	isoCINK+? BU-5S
BU12065S-M3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 12A BU-5S Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU-5S Supplier Device Package: isoCINK+? BU-5S	패키지: 4-SIP, BU-5S	재고6,128	Standard	600V	12A	1.05V @ 6A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU-5S	isoCINK+? BU-5S
DBL207GHC1G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: DBL	패키지: 4-DIP (0.300", 7.62mm)	재고6,336	Standard	1000V	2A	1.15V @ 2A	2µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	DBL
GBLA01-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1PH 4A 100V GBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBL Supplier Device Package: GBL	패키지: 4-SIP, GBL	재고6,720	Standard	100V	3A	1.1V @ 4A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBL	GBL
CBRHD-10 BK	Central Semiconductor Corp	IC RECT BRIDGE 1000V 0.5A HD DIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: 4-HD DIP	패키지: 4-SMD, Gull Wing	재고2,048	Standard	1000V	500mA	1V @ 400mA	5µA @ 1000V	-65°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	4-HD DIP
2KBP01M-M4/51	Vishay Semiconductor Diodes Division	DIODE GPP 2A 100V KBPM Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A Current - Reverse Leakage @ Vr: 5µA @ 100V Operating Temperature: -55°C ~ 165°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBPM Supplier Device Package: KBPM	패키지: 4-SIP, KBPM	재고6,608	Standard	100V	2A	1.1V @ 3.14A	5µA @ 100V	-55°C ~ 165°C (TJ)	Through Hole	4-SIP, KBPM	KBPM
B80C800G-E4/51	Vishay Semiconductor Diodes Division	DIODE BRIDGE 0.9A 125V WOG Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 125V Current - Average Rectified (Io): 900mA Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA Current - Reverse Leakage @ Vr: 10µA @ 125V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 4-Circular, WOG Supplier Device Package: WOG	패키지: 4-Circular, WOG	재고4,064	Standard	125V	900mA	1V @ 900mA	10µA @ 125V	-40°C ~ 125°C (TJ)	Through Hole	4-Circular, WOG	WOG
KBP402GTB	SMC Diode Solutions	BRIDGE RECT 1PHASE 200V 4A KBP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 200V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP Supplier Device Package: KBP	패키지: 4-ESIP	재고7,120	Standard	200V	4A	1.1V @ 4A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-ESIP	KBP
ABS10 RGG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 1A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: 4-SMD, Gull Wing	재고97,056	Standard	1000V	800mA	950mV @ 400mA	10µA @ 1000V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Gull Wing	ABS
BU1006A-M3/45	Vishay Semiconductor Diodes Division	RECTIFIER BRIDGE 600V 10A BU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Current - Reverse Leakage @ Vr: 10µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, BU Supplier Device Package: isoCINK+? BU	패키지: 4-SIP, BU	재고6,624	Standard	600V	10A	1.1V @ 5A	10µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, BU	isoCINK+? BU
GBU4G	Fairchild/ON Semiconductor	RECT BRIDGE GPP 4A 400V GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: 4-SIP, GBU	재고26,616	Standard	400V	4A	1V @ 4A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
DF04M-E3/45	Vishay Semiconductor Diodes Division	DIODE GPP 1A 400V 4DIP Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Current - Reverse Leakage @ Vr: 5µA @ 400V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-EDIP (0.300", 7.62mm) Supplier Device Package: DFM	패키지: 4-EDIP (0.300", 7.62mm)	재고34,392	Standard	400V	1A	1.1V @ 1A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-EDIP (0.300", 7.62mm)	DFM
GBJ806-F	Diodes Incorporated	RECT BRIDGE GPP 8A 600V GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고7,128	Standard	600V	8A	1V @ 4A	5µA @ 600V	-65°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
GBJ3510-BP	Micro Commercial Co	IC RECT BRIDGE GPP 35A 1000V GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 17.5A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ	패키지: 4-SIP, GBJ	재고20,208	Standard	1000V	35A	1.05V @ 17.5A	10µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ
TBS20M-TP	Micro Commercial Co	BRIDGE RECT 2A 1000V TBS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TBS	패키지: 4-SMD, Flat Leads	재고26,682	Standard	1000V	2A	1.1V @ 2A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TBS
GBJ3506ULV_T0_00601	Panjit International Inc.	ULTRA LOW VF BRIDGE RECTIFIER WI Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 17.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ-2	패키지: -	재고3,780	Standard	600 V	35 A	920 mV @ 17.5 A	1 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ-2
GBJ3506	SMC Diode Solutions	BRIDGE RECT 1PHASE 600V 35A GBJ Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-ESIP Supplier Device Package: GBJ	패키지: -	재고255	Standard	600 V	35 A	-	5 µA @ 600 V	-55°C ~ 150°C (TJ)	Through Hole	4-ESIP	GBJ
GBJ8M	Surge	8A -1000V - GBJ - BRIDGE Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Supplier Device Package: GBJ-6	패키지: -	Request a Quote	Standard	1 kV	8 A	1 V @ 4 A	10 µA @ 1000 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBJ	GBJ-6
GBU6KL-6441M3-51	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 800V 3.8A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 3.8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	800 V	3.8 A	1 V @ 6 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU
RS806	Rectron USA	BRIDGE RECT GLASS 800V 8A RS-8 Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, RS-8 Supplier Device Package: RS-8	패키지: -	Request a Quote	Standard	800 V	8 A	1.2 V @ 8 A	5 µA @ 800 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, RS-8	RS-8
DDB2U60N12W3RFC39BPSA1	Infineon Technologies	LOW POWER EASY Diode Type: - Technology: - Voltage - Peak Reverse (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Current - Reverse Leakage @ Vr: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고24	-	-	-	-	-	-	-	-	-
KBPC3506FP	Diotec Semiconductor	BRIDGE 1-PH KBPC 600V 35A 150C Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 35 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 4-Square, KBPC35 Supplier Device Package: KBPC35	패키지: -	Request a Quote	Standard	600 V	35 A	1.1 V @ 17.5 A	10 µA @ 600 V	-50°C ~ 150°C (TJ)	Chassis Mount	4-Square, KBPC35	KBPC35
GBJA601-BP	Micro Commercial Co	DIODE BRIDGE 6A JA Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: 4-SIP, JA Supplier Device Package: JA	패키지: -	Request a Quote	Standard	100 V	6 A	1.1 V @ 3 A	10 µA @ 100 V	-55°C ~ 150°C	Through Hole	4-SIP, JA	JA
GBU4GL-6420M3-51	Vishay General Semiconductor - Diodes Division	BRIDGE RECT 1PHASE 400V 3A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	Request a Quote	Standard	400 V	3 A	1 V @ 4 A	5 µA @ 400 V	-55°C ~ 150°C (TJ)	Through Hole	4-SIP, GBU	GBU

DBG150G

ON Semiconductor

DIODE BRIDGE 1PH 15A 600V 4SIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 3.6A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 7.5A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, DBG
Supplier Device Package: -

패키지: 4-SIP, DBG

재고6,608

Standard

600V

3.6A

900mV @ 7.5A

10µA @ 600V

150°C (TJ)

Through Hole

4-SIP, DBG

-

RM75TPM-2H

Powerex Inc.

DIODE 3-PHASE BRIDGE 1600V 150A

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1600V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 150A
Current - Reverse Leakage @ Vr: 15mA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고6,816

Standard

1600V

150A

1.3V @ 150A

15mA @ 1600V

-40°C ~ 150°C (TJ)

Chassis Mount

Module

2W04G

Diodes Incorporated

RECT BRIDGE GPP 2A 400V WOG

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOG
Supplier Device Package: WOG

패키지: 4-Circular, WOG

재고51,468

Standard

400V

2A

1.1V @ 2A

5µA @ 400V

-65°C ~ 150°C (TJ)

Through Hole

4-Circular, WOG

WOG

MB351-F

Diodes Incorporated

RECTIFIER BRIDGE 100V 35A MB

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 17.5A
Current - Reverse Leakage @ Vr: 10µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: 4-Square, MB
Supplier Device Package: MB

패키지: 4-Square, MB

재고5,120

Standard

100V

35A

1.2V @ 17.5A

10µA @ 100V

-55°C ~ 150°C (TJ)

QC Terminal

4-Square, MB

MB

VUO30-08NO3

IXYS

RECT BRIDGE 3PH 37A 800V FO-F-B

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 37A
Voltage - Forward (Vf) (Max) @ If: 2.55V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: FO-F-B
Supplier Device Package: FO-F-B

패키지: FO-F-B

재고5,504

Standard

800V

37A

2.55V @ 150A

300µA @ 800V

-40°C ~ 125°C (TJ)

Chassis Mount

FO-F-B

VUO27-12NO7

IXYS

RECT BRIDGE 3PH 28A 1200V SLIM

Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1200V
Current - Average Rectified (Io): 28A
Voltage - Forward (Vf) (Max) @ If: 1.12V @ 7A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Slim-PAC
Supplier Device Package: Slim-PAC

패키지: Slim-PAC

재고3,520

Standard

1200V

28A

1.12V @ 7A

300µA @ 1200V

-40°C ~ 150°C (TJ)

Chassis Mount

Slim-PAC

BU25085S-E3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 800V 25A BU-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Supplier Device Package: isoCINK+? BU-5S

패키지: 4-SIP, BU-5S

재고2,320

Standard

800V

3.5A

1.05V @ 12.5A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU-5S

isoCINK+? BU-5S

BU12065S-M3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 12A BU-5S

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 6A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU-5S
Supplier Device Package: isoCINK+? BU-5S

패키지: 4-SIP, BU-5S

재고6,128

Standard

600V

12A

1.05V @ 6A

5µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU-5S

isoCINK+? BU-5S

DBL207GHC1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: DBL

패키지: 4-DIP (0.300", 7.62mm)

재고6,336

Standard

1000V

2A

1.15V @ 2A

2µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-DIP (0.300", 7.62mm)

DBL

GBLA01-E3/45

Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 100V GBL

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Supplier Device Package: GBL

패키지: 4-SIP, GBL

재고6,720

Standard

100V

3A

1.1V @ 4A

5µA @ 100V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBL

GBL

CBRHD-10 BK

Central Semiconductor Corp

IC RECT BRIDGE 1000V 0.5A HD DIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: 4-HD DIP

패키지: 4-SMD, Gull Wing

재고2,048

Standard

1000V

500mA

1V @ 400mA

5µA @ 1000V

-65°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

4-HD DIP

2KBP01M-M4/51

Vishay Semiconductor Diodes Division

DIODE GPP 2A 100V KBPM

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
Current - Reverse Leakage @ Vr: 5µA @ 100V
Operating Temperature: -55°C ~ 165°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, KBPM
Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

재고6,608

Standard

100V

2A

1.1V @ 3.14A

5µA @ 100V

-55°C ~ 165°C (TJ)

Through Hole

4-SIP, KBPM

KBPM

B80C800G-E4/51

Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.9A 125V WOG

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 125V
Current - Average Rectified (Io): 900mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 900mA
Current - Reverse Leakage @ Vr: 10µA @ 125V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-Circular, WOG
Supplier Device Package: WOG

패키지: 4-Circular, WOG

재고4,064

Standard

125V

900mA

1V @ 900mA

10µA @ 125V

-40°C ~ 125°C (TJ)

Through Hole

4-Circular, WOG

WOG

KBP402GTB

SMC Diode Solutions

BRIDGE RECT 1PHASE 200V 4A KBP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 200V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: KBP

패키지: 4-ESIP

재고7,120

Standard

200V

4A

1.1V @ 4A

5µA @ 200V

-55°C ~ 150°C (TJ)

Through Hole

4-ESIP

KBP

ABS10 RGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: ABS

패키지: 4-SMD, Gull Wing

재고97,056

Standard

1000V

800mA

950mV @ 400mA

10µA @ 1000V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Gull Wing

ABS

BU1006A-M3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 600V 10A BU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Current - Reverse Leakage @ Vr: 10µA @ 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

재고6,624

Standard

600V

10A

1.1V @ 5A

10µA @ 600V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, BU

isoCINK+? BU

GBU4G

Fairchild/ON Semiconductor

RECT BRIDGE GPP 4A 400V GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: 4-SIP, GBU

재고26,616

Standard

400V

4A

1V @ 4A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

DF04M-E3/45

Vishay Semiconductor Diodes Division

DIODE GPP 1A 400V 4DIP

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Current - Reverse Leakage @ Vr: 5µA @ 400V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Supplier Device Package: DFM

패키지: 4-EDIP (0.300", 7.62mm)

재고34,392

Standard

400V

1A

1.1V @ 1A

5µA @ 400V

-55°C ~ 150°C (TJ)

Through Hole

4-EDIP (0.300", 7.62mm)

DFM

GBJ806-F

Diodes Incorporated

RECT BRIDGE GPP 8A 600V GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Current - Reverse Leakage @ Vr: 5µA @ 600V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고7,128

Standard

600V

8A

1V @ 4A

5µA @ 600V

-65°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

GBJ3510-BP

Micro Commercial Co

IC RECT BRIDGE GPP 35A 1000V GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 17.5A
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ

패키지: 4-SIP, GBJ

재고20,208

Standard

1000V

35A

1.05V @ 17.5A

10µA @ 1000V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ

TBS20M-TP

Micro Commercial Co

BRIDGE RECT 2A 1000V TBS

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1000V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TBS

패키지: 4-SMD, Flat Leads

재고26,682

Standard

1000V

2A

1.1V @ 2A

5µA @ 1000V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TBS

GBJ3506ULV_T0_00601

Panjit International Inc.

ULTRA LOW VF BRIDGE RECTIFIER WI

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 17.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ-2

패키지: -

재고3,780

Standard

600 V

35 A

920 mV @ 17.5 A

1 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ-2

GBJ3506

SMC Diode Solutions

BRIDGE RECT 1PHASE 600V 35A GBJ

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: GBJ

패키지: -

재고255

Standard

600 V

35 A

-

5 µA @ 600 V

-55°C ~ 150°C (TJ)

Through Hole

4-ESIP

GBJ

GBJ8M

Surge

8A -1000V - GBJ - BRIDGE

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Supplier Device Package: GBJ-6

패키지: -

Request a Quote

Standard

1 kV

8 A

1 V @ 4 A

10 µA @ 1000 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBJ

GBJ-6

GBU6KL-6441M3-51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3.8A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 3.8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

Request a Quote

Standard

800 V

3.8 A

1 V @ 6 A

5 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU

RS806

Rectron USA

BRIDGE RECT GLASS 800V 8A RS-8

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-8
Supplier Device Package: RS-8

패키지: -

Request a Quote

Standard

800 V

8 A

1.2 V @ 8 A

5 µA @ 800 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, RS-8

RS-8

DDB2U60N12W3RFC39BPSA1

Infineon Technologies

LOW POWER EASY

Diode Type: -
Technology: -
Voltage - Peak Reverse (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Current - Reverse Leakage @ Vr: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고24

-

KBPC3506FP

Diotec Semiconductor

BRIDGE 1-PH KBPC 600V 35A 150C

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 4-Square, KBPC35
Supplier Device Package: KBPC35

패키지: -

Request a Quote

Standard

600 V

35 A

1.1 V @ 17.5 A

10 µA @ 600 V

-50°C ~ 150°C (TJ)

Chassis Mount

4-Square, KBPC35

KBPC35

GBJA601-BP

Micro Commercial Co

DIODE BRIDGE 6A JA

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Package / Case: 4-SIP, JA
Supplier Device Package: JA

패키지: -

Request a Quote

Standard

100 V

6 A

1.1 V @ 3 A

10 µA @ 100 V

-55°C ~ 150°C

Through Hole

4-SIP, JA

JA

GBU4GL-6420M3-51

Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 400V 3A GBU

Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Supplier Device Package: GBU

패키지: -

Request a Quote

Standard

400 V

3 A

1 V @ 4 A

5 µA @ 400 V

-55°C ~ 150°C (TJ)

Through Hole

4-SIP, GBU

GBU