페이지 2 - Diodes Incorporated 제품 - PMIC - 게이트 구동기

부품 번호	제조업체	설명	패키지	재고	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DGD2106S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.6V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,040	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.6V, 2.5V	290mA, 600mA	Non-Inverting	600V	100ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2104S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,288	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2184S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 40ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,752	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	1.9A, 2.3A	Non-Inverting	600V	40ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2190S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4.5A, 4.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 25ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,912	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	4.5A, 4.5A	Non-Inverting	600V	25ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2101S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,016	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2104AS8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 210mA, 360mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,904	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	210mA, 360mA	Non-Inverting	600V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD0507FN-7	Diodes Incorporated	IC GATE DVR HV W-DFN3030-10 Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 8 V ~ 14 V Logic Voltage - VIL, VIH: 1V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 50V Rise / Fall Time (Typ): 17ns, 13ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: W-DFN3030-10	패키지: 10-WFDFN Exposed Pad	재고4,592	Independent	2	N-Channel MOSFET	8 V ~ 14 V	1V, 2.5V	1.5A, 2.5A	Non-Inverting	50V	17ns, 13ns	-40°C ~ 150°C (TJ)	Surface Mount	10-WFDFN Exposed Pad	W-DFN3030-10
DGD2103AS8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,912	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD0506FN-7	Diodes Incorporated	IC GATE DVR HV W-DFN3030-10 Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 8 V ~ 14 V Logic Voltage - VIL, VIH: 1V, 2.5V Current - Peak Output (Source, Sink): 1.5A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 50V Rise / Fall Time (Typ): 17ns, 12ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: W-DFN3030-10	패키지: 10-WFDFN Exposed Pad	재고4,224	Synchronous	2	N-Channel MOSFET	8 V ~ 14 V	1V, 2.5V	1.5A, 2.5A	Non-Inverting	50V	17ns, 12ns	-40°C ~ 150°C (TJ)	Surface Mount	10-WFDFN Exposed Pad	W-DFN3030-10
DGD2103S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,408	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600V	100ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2104MS8-13	Diodes Incorporated	IC GATE DRVR HV SO8 Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,768	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2103MS8-13	Diodes Incorporated	IC GATE DRVR HV SO8 Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,552	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	600V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD1504S8-13	Diodes Incorporated	IC GATE DRVR HALF BRIDGE SO-8 Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 250V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,512	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	250V	70ns, 35ns	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD0504FN-7	Diodes Incorporated	IC GATE DVR HV 10-WDFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: W-DFN3030-10	패키지: 10-WFDFN Exposed Pad	재고3,216	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	100V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	10-WFDFN Exposed Pad	W-DFN3030-10
DGD1503S8-13	Diodes Incorporated	IC GATE DRVR HALF BRIDGE SO-8 Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 250V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,208	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	250V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD0503FN-7	Diodes Incorporated	IC GATE DVR HV 10-WDFN Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: W-DFN3030-10	패키지: 10-WFDFN Exposed Pad	재고2,336	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	290mA, 600mA	Non-Inverting	100V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	10-WFDFN Exposed Pad	W-DFN3030-10
ZXGD3101N8TC	Diodes Incorporated	IC SYNCH MOSFET CNTRLR 4A 8SO Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 5 V ~ 15 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2.5A, 2.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 305ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고99,180	Single	1	N-Channel MOSFET	5 V ~ 15 V	-	2.5A, 2.5A	Non-Inverting	-	305ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXGD3104N8TC	Diodes Incorporated	IC SYNCH MOSFET CNTLR 8SO Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 5 V ~ 25 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2.5A, 7A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 480ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고15,240	Single	1	N-Channel MOSFET	5 V ~ 25 V	-	2.5A, 7A	Non-Inverting	-	480ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2304S8-13	Diodes Incorporated	IC GATE DRVR HV SO8 Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.7V, 2.3V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 70ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,264	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.7V, 2.3V	290mA, 600mA	Non-Inverting	600V	70ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXGD3105N8TC	Diodes Incorporated	IC SYNCH MOSFET CNTLR 8SO Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 25 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 4A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 77ns, 26ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고10,800	Single	1	N-Channel MOSFET	4.5 V ~ 25 V	-	4A, 9A	Non-Inverting	-	77ns, 26ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DGD2108S8-13	Diodes Incorporated	IC GATE DRVR HALF-BRIDGE 8SO Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.6V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고26,256	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.6V, 2.5V	290mA, 600mA	Non-Inverting	600V	100ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXGD3001E6TA	Diodes Incorporated	IC GATE DRVR IGBT/MOSFET SOT23-6 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 12V (Max) Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 7.3ns, 11ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: SOT-23-6	재고109,524	Single	1	IGBT, N-Channel MOSFET	12V (Max)	-	9A, 9A	Non-Inverting	-	7.3ns, 11ns	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
ZXGD3103N8TC	Diodes Incorporated	IC SYNCH MOSFET CNTRLR 4A 8SO Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 5 V ~ 15 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2.5A, 6A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 450ns, 21ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고169,932	Single	1	N-Channel MOSFET	5 V ~ 15 V	-	2.5A, 6A	Non-Inverting	-	450ns, 21ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXGD3004E6TA	Diodes Incorporated	IC GATE DRVR IGBT/MOSFET SOT23-6 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 40V (Max) Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 8A, 8A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 13.4ns, 12.4ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: SOT-23-6	재고74,400	Single	1	IGBT, N-Channel MOSFET	40V (Max)	-	8A, 8A	Non-Inverting	-	13.4ns, 12.4ns	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
ZXGD3002E6TA	Diodes Incorporated	IC GATE DRVR IGBT/MOSFET SOT23-6 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 20V (Max) Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 8.3ns, 10.8ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: SOT-23-6	재고32,844	Single	1	IGBT, N-Channel MOSFET	20V (Max)	-	9A, 9A	Non-Inverting	-	8.3ns, 10.8ns	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
ZXGD3003E6TA	Diodes Incorporated	IC GATE DRVR IGBT/MOSFET SOT23-6 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 40V (Max) Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 5A, 5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 8.9ns, 8.9ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: SOT-23-6	재고36,000	Single	1	IGBT, N-Channel MOSFET	40V (Max)	-	5A, 5A	Non-Inverting	-	8.9ns, 8.9ns	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
ZXGD3006E6TA	Diodes Incorporated	IC GATE DRVR IGBT/MOSFET SOT26 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, SiC MOSFET Voltage - Supply: 40V (Max) Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 10A, 10A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 48ns, 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: SOT-23-6	재고144,000	Single	1	IGBT, SiC MOSFET	40V (Max)	-	10A, 10A	Non-Inverting	-	48ns, 35ns	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
ZXGD3005E6TA	Diodes Incorporated	IC GATE DVR IGBT/MOSFET SOT26 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 25V (Max) Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 10A, 10A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 48ns, 35ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	패키지: SOT-23-6	재고102,000	Single	1	IGBT, N-Channel MOSFET	25V (Max)	-	10A, 10A	Non-Inverting	-	48ns, 35ns	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
DGD21904MS14-13	Diodes Incorporated	HV GATE DRIVER SO-14 T&R 2.5K Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,192	-	-	-	-	-	-	-	-	-	-	-	-	-
DGD2106MS8-13	Diodes Incorporated	HV GATE DRIVER SO-8 T&R 2.5K Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,728	-	-	-	-	-	-	-	-	-	-	-	-	-

DGD2106S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.6V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,040

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.6V, 2.5V

290mA, 600mA

Non-Inverting

600V

100ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2104S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,288

Synchronous

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

600V

70ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2184S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 40ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,752

Synchronous

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

1.9A, 2.3A

Non-Inverting

600V

40ns, 20ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2190S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 25ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,912

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

4.5A, 4.5A

Non-Inverting

600V

25ns, 20ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2101S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,016

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

600V

70ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2104AS8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 210mA, 360mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,904

Synchronous

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

210mA, 360mA

Non-Inverting

600V

100ns, 50ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD0507FN-7

Diodes Incorporated

IC GATE DVR HV W-DFN3030-10

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 8 V ~ 14 V
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50V
Rise / Fall Time (Typ): 17ns, 13ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: W-DFN3030-10

패키지: 10-WFDFN Exposed Pad

재고4,592

Independent

2

N-Channel MOSFET

8 V ~ 14 V

1V, 2.5V

1.5A, 2.5A

Non-Inverting

50V

17ns, 13ns

-40°C ~ 150°C (TJ)

Surface Mount

10-WFDFN Exposed Pad

W-DFN3030-10

DGD2103AS8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,912

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

600V

100ns, 50ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD0506FN-7

Diodes Incorporated

IC GATE DVR HV W-DFN3030-10

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 8 V ~ 14 V
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 1.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50V
Rise / Fall Time (Typ): 17ns, 12ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: W-DFN3030-10

패키지: 10-WFDFN Exposed Pad

재고4,224

Synchronous

2

N-Channel MOSFET

8 V ~ 14 V

1V, 2.5V

1.5A, 2.5A

Non-Inverting

50V

17ns, 12ns

-40°C ~ 150°C (TJ)

Surface Mount

10-WFDFN Exposed Pad

W-DFN3030-10

DGD2103S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,408

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

600V

100ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2104MS8-13

Diodes Incorporated

IC GATE DRVR HV SO8

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,768

Synchronous

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

600V

70ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2103MS8-13

Diodes Incorporated

IC GATE DRVR HV SO8

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,552

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

600V

70ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD1504S8-13

Diodes Incorporated

IC GATE DRVR HALF BRIDGE SO-8

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 250V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,512

Synchronous

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

250V

70ns, 35ns

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD0504FN-7

Diodes Incorporated

IC GATE DVR HV 10-WDFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: W-DFN3030-10

패키지: 10-WFDFN Exposed Pad

재고3,216

Synchronous

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

100V

70ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

10-WFDFN Exposed Pad

W-DFN3030-10

DGD1503S8-13

Diodes Incorporated

IC GATE DRVR HALF BRIDGE SO-8

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 250V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,208

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

250V

70ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD0503FN-7

Diodes Incorporated

IC GATE DVR HV 10-WDFN

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: W-DFN3030-10

패키지: 10-WFDFN Exposed Pad

재고2,336

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

290mA, 600mA

Non-Inverting

100V

70ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

10-WFDFN Exposed Pad

W-DFN3030-10

ZXGD3101N8TC

Diodes Incorporated

IC SYNCH MOSFET CNTRLR 4A 8SO

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 5 V ~ 15 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 305ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고99,180

Single

1

N-Channel MOSFET

5 V ~ 15 V

-

2.5A, 2.5A

Non-Inverting

-

305ns, 20ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXGD3104N8TC

Diodes Incorporated

IC SYNCH MOSFET CNTLR 8SO

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 5 V ~ 25 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2.5A, 7A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 480ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고15,240

Single

1

N-Channel MOSFET

5 V ~ 25 V

-

2.5A, 7A

Non-Inverting

-

480ns, 50ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2304S8-13

Diodes Incorporated

IC GATE DRVR HV SO8

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.7V, 2.3V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 70ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,264

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.7V, 2.3V

290mA, 600mA

Non-Inverting

600V

70ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXGD3105N8TC

Diodes Incorporated

IC SYNCH MOSFET CNTLR 8SO

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 25 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 4A, 9A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 77ns, 26ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고10,800

Single

1

N-Channel MOSFET

4.5 V ~ 25 V

-

4A, 9A

Non-Inverting

-

77ns, 26ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DGD2108S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDGE 8SO

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.6V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고26,256

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.6V, 2.5V

290mA, 600mA

Non-Inverting

600V

100ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXGD3001E6TA

Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT23-6

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 12V (Max)
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 9A, 9A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 7.3ns, 11ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: SOT-23-6

재고109,524

Single

1

IGBT, N-Channel MOSFET

12V (Max)

-

9A, 9A

Non-Inverting

-

7.3ns, 11ns

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

ZXGD3103N8TC

Diodes Incorporated

IC SYNCH MOSFET CNTRLR 4A 8SO

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 5 V ~ 15 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2.5A, 6A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 450ns, 21ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고169,932

Single

1

N-Channel MOSFET

5 V ~ 15 V

-

2.5A, 6A

Non-Inverting

-

450ns, 21ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXGD3004E6TA

Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT23-6

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 40V (Max)
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 8A, 8A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 13.4ns, 12.4ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: SOT-23-6

재고74,400

Single

1

IGBT, N-Channel MOSFET

40V (Max)

-

8A, 8A

Non-Inverting

-

13.4ns, 12.4ns

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

ZXGD3002E6TA

Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT23-6

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 20V (Max)
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 9A, 9A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 8.3ns, 10.8ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: SOT-23-6

재고32,844

Single

1

IGBT, N-Channel MOSFET

20V (Max)

-

9A, 9A

Non-Inverting

-

8.3ns, 10.8ns

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

ZXGD3003E6TA

Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT23-6

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 40V (Max)
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 5A, 5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 8.9ns, 8.9ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: SOT-23-6

재고36,000

Single

1

IGBT, N-Channel MOSFET

40V (Max)

-

5A, 5A

Non-Inverting

-

8.9ns, 8.9ns

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

ZXGD3006E6TA

Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT26

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, SiC MOSFET
Voltage - Supply: 40V (Max)
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 10A, 10A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 48ns, 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: SOT-23-6

재고144,000

Single

1

IGBT, SiC MOSFET

40V (Max)

-

10A, 10A

Non-Inverting

-

48ns, 35ns

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

ZXGD3005E6TA

Diodes Incorporated

IC GATE DVR IGBT/MOSFET SOT26

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 25V (Max)
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 10A, 10A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 48ns, 35ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

패키지: SOT-23-6

재고102,000

Single

1

IGBT, N-Channel MOSFET

25V (Max)

-

10A, 10A

Non-Inverting

-

48ns, 35ns

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

DGD21904MS14-13

Diodes Incorporated

HV GATE DRIVER SO-14 T&R 2.5K

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,192

-

DGD2106MS8-13

Diodes Incorporated

HV GATE DRIVER SO-8 T&R 2.5K

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,728

-