페이지 8 - Cree/Wolfspeed 제품

부품 번호	제조업체	설명	패키지	재고
CGHV50200F	Cree/Wolfspeed	200-W 4400-5000-MHZ 50-OHM I Transistor Type: HEMT Frequency: 5GHz Gain: 11.8dB Voltage - Test: 40V Current Rating: 17A Noise Figure: - Current - Test: 1A Power - Output: 200W Voltage - Rated: 125V Package / Case: 440217 Supplier Device Package: 440217	패키지: 440217	재고4,144
CGHV96100F2	Cree/Wolfspeed	FET RF 100V 9.6GHZ 440210 Transistor Type: HEMT Frequency: 7.9GHz ~ 9.6GHz Gain: 10.2dB Voltage - Test: 40V Current Rating: 12A Noise Figure: - Current - Test: 1A Power - Output: 131W Voltage - Rated: 100V Package / Case: 440210 Supplier Device Package: 440210	패키지: 440210	재고5,312
CGH55015F2	Cree/Wolfspeed	FET RF 84V 5.65GHZ 440166 Transistor Type: HEMT Frequency: 5.65GHz Gain: 12dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 200mA Power - Output: 12.5W Voltage - Rated: 84V Package / Case: 440166 Supplier Device Package: 440166	패키지: 440166	재고6,444
CGHV35060MP	Cree/Wolfspeed	RF MOSFET HEMT 50V 20TSSOP Transistor Type: HEMT Frequency: 2.7GHz ~ 3.5GHz Gain: 14.5dB Voltage - Test: 50V Current Rating: - Noise Figure: - Current - Test: 125mA Power - Output: 60W Voltage - Rated: 150V Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad Supplier Device Package: 20-TSSOP	패키지: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad	재고5,216
CGHV1F025S	Cree/Wolfspeed	FET RF 100V 6GHZ 12DFN Transistor Type: HEMT Frequency: 6GHz Gain: 16dB Voltage - Test: 40V Current Rating: 2A Noise Figure: - Current - Test: 150mA Power - Output: 29W Voltage - Rated: 100V Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x3)	패키지: 12-VFDFN Exposed Pad	재고7,312
CGH40120F	Cree/Wolfspeed	FET RF 84V 4GHZ 440193 Transistor Type: HEMT Frequency: 0Hz ~ 4GHz Gain: 19dB Voltage - Test: 28V Current Rating: 28A Noise Figure: - Current - Test: 1A Power - Output: 120W Voltage - Rated: 84V Package / Case: 440193 Supplier Device Package: 440193	패키지: 440193	재고13,956
CGH27015F	Cree/Wolfspeed	RF MOSFET HEMT 28V 440166 Transistor Type: HEMT Frequency: 3GHz Gain: 15dB Voltage - Test: 28V Current Rating: - Noise Figure: - Current - Test: 100mA Power - Output: 15W Voltage - Rated: 84V Package / Case: 440166 Supplier Device Package: 440166	패키지: 440166	재고7,536
CGHV1F006S	Cree/Wolfspeed	FET RF 40V 6GHZ 12DFN Transistor Type: HEMT Frequency: 6GHz Gain: 16dB Voltage - Test: 40V Current Rating: 950mA Noise Figure: - Current - Test: 60mA Power - Output: 8W Voltage - Rated: 100V Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x3)	패키지: 12-VFDFN Exposed Pad	재고16,164
CAS325M12HM2	Cree/Wolfspeed	MOSFET 2N-CH 1200V 444A MODULE FET Type: 2 N-Channel (Half Bridge) FET Feature: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 444A (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V Vgs(th) (Max) @ Id: 4V @ 105mA Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3000W Operating Temperature: 175°C (TJ) Mounting Type: - Package / Case: Module Supplier Device Package: Module	패키지: Module	재고6,992
CSD04060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 220pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고5,312
CSD02060G	Cree/Wolfspeed	DIODE SCHOTTKY 600V 3.5A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고3,328
CPW3-1700-S010B-WP	Cree/Wolfspeed	DIODE SILICON 1.7KV 10A CHIP Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1700V Capacitance @ Vr, F: 880pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	패키지: Die	재고3,376
C3D10060G-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 29.5A TO263 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 29.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 480pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고5,520
C3D06060G-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 6A TO263-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 295pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	재고63,840
C3D03065E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 650V 11.5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 11.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고2,144
C3D02065E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 650V 8A TO252-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 120pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,120
C3D02060E-TR	Cree/Wolfspeed	DIODE SCHOTTKY 600V 8A TO252-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 11pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고65,784
C3D03065E	Cree/Wolfspeed	DIODE SCHOTTKY 650V 3A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,392
C4D05120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 8.2A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8.2A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150µA @ 1200V Capacitance @ Vr, F: 390pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고6,576
C3D04060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고13,428
C3D03060E	Cree/Wolfspeed	DIODE SCHOTTKY 600V 3A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 155pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고6,896
C2D05120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 17.5A TO252 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 455pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고7,188
C3D06065I	Cree/Wolfspeed	DIODE SCHOTTKY 650V 13A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 13A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 650V Capacitance @ Vr, F: 295pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Supplier Device Package: TO-220-2 Isolated Tab Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2 Isolated Tab	재고19,308
C4D20120A	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 20A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 1500pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고16,320
CVFD20065A	Cree/Wolfspeed	DIODE SCHKY SIC 650V 20A TO-220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 80µA @ 650V Capacitance @ Vr, F: 1100pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-220-2	재고7,260
C4D05120E	Cree/Wolfspeed	DIODE SCHOTTKY 1.2KV 5A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 150µA @ 1200V Capacitance @ Vr, F: 390pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고59,508
CSD20060D	Cree/Wolfspeed	DIODE ARRAY SCHOTTKY 600V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 16.5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	패키지: TO-247-3	재고15,108
CGHV59350F-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV59350F Type: HEMT Frequency: 5.2GHz ~ 5.9GHz For Use With/Related Products: CGHV59350 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고6,642
CGHV96100F2-TB	Cree/Wolfspeed	TEST FIXTURE FOR CGHV96100F2 Type: FET Frequency: 8.4GHz ~ 9.6GHz For Use With/Related Products: CGHV96100 Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고4,932
CMPA0060002F-TB	Cree/Wolfspeed	BOARD DEMO AMP CIRC CMPA0060002 Type: Amplifier Frequency: 6GHz For Use With/Related Products: CMPA0060002F Supplied Contents: Partially Populated Board - Main IC Not Included	패키지: -	재고3,942

CGHV50200F

Cree/Wolfspeed

200-W 4400-5000-MHZ 50-OHM I

Transistor Type: HEMT
Frequency: 5GHz
Gain: 11.8dB
Voltage - Test: 40V
Current Rating: 17A
Noise Figure: -
Current - Test: 1A
Power - Output: 200W
Voltage - Rated: 125V
Package / Case: 440217
Supplier Device Package: 440217

패키지: 440217

재고4,144

CGHV96100F2

Cree/Wolfspeed

FET RF 100V 9.6GHZ 440210

Transistor Type: HEMT
Frequency: 7.9GHz ~ 9.6GHz
Gain: 10.2dB
Voltage - Test: 40V
Current Rating: 12A
Noise Figure: -
Current - Test: 1A
Power - Output: 131W
Voltage - Rated: 100V
Package / Case: 440210
Supplier Device Package: 440210

패키지: 440210

재고5,312

CGH55015F2

Cree/Wolfspeed

FET RF 84V 5.65GHZ 440166

Transistor Type: HEMT
Frequency: 5.65GHz
Gain: 12dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 200mA
Power - Output: 12.5W
Voltage - Rated: 84V
Package / Case: 440166
Supplier Device Package: 440166

패키지: 440166

재고6,444

CGHV35060MP

Cree/Wolfspeed

RF MOSFET HEMT 50V 20TSSOP

Transistor Type: HEMT
Frequency: 2.7GHz ~ 3.5GHz
Gain: 14.5dB
Voltage - Test: 50V
Current Rating: -
Noise Figure: -
Current - Test: 125mA
Power - Output: 60W
Voltage - Rated: 150V
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Supplier Device Package: 20-TSSOP

패키지: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad

재고5,216

CGHV1F025S

Cree/Wolfspeed

FET RF 100V 6GHZ 12DFN

Transistor Type: HEMT
Frequency: 6GHz
Gain: 16dB
Voltage - Test: 40V
Current Rating: 2A
Noise Figure: -
Current - Test: 150mA
Power - Output: 29W
Voltage - Rated: 100V
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x3)

패키지: 12-VFDFN Exposed Pad

재고7,312

CGH40120F

Cree/Wolfspeed

FET RF 84V 4GHZ 440193

Transistor Type: HEMT
Frequency: 0Hz ~ 4GHz
Gain: 19dB
Voltage - Test: 28V
Current Rating: 28A
Noise Figure: -
Current - Test: 1A
Power - Output: 120W
Voltage - Rated: 84V
Package / Case: 440193
Supplier Device Package: 440193

패키지: 440193

재고13,956

CGH27015F

Cree/Wolfspeed

RF MOSFET HEMT 28V 440166

Transistor Type: HEMT
Frequency: 3GHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: -
Noise Figure: -
Current - Test: 100mA
Power - Output: 15W
Voltage - Rated: 84V
Package / Case: 440166
Supplier Device Package: 440166

패키지: 440166

재고7,536

CGHV1F006S

Cree/Wolfspeed

FET RF 40V 6GHZ 12DFN

Transistor Type: HEMT
Frequency: 6GHz
Gain: 16dB
Voltage - Test: 40V
Current Rating: 950mA
Noise Figure: -
Current - Test: 60mA
Power - Output: 8W
Voltage - Rated: 100V
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x3)

패키지: 12-VFDFN Exposed Pad

재고16,164

CAS325M12HM2

Cree/Wolfspeed

MOSFET 2N-CH 1200V 444A MODULE

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V
Vgs(th) (Max) @ Id: 4V @ 105mA
Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3000W
Operating Temperature: 175°C (TJ)
Mounting Type: -
Package / Case: Module
Supplier Device Package: Module

패키지: Module

재고6,992

CSD04060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 220pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고5,312

CSD02060G

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3.5A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고3,328

CPW3-1700-S010B-WP

Cree/Wolfspeed

DIODE SILICON 1.7KV 10A CHIP

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 1700V
Capacitance @ Vr, F: 880pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C

패키지: Die

재고3,376

C3D10060G-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 29.5A TO263

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 29.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고5,520

C3D06060G-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 6A TO263-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

재고63,840

C3D03065E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 650V 11.5A TO252

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 11.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고2,144

C3D02065E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 650V 8A TO252-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,120

C3D02060E-TR

Cree/Wolfspeed

DIODE SCHOTTKY 600V 8A TO252-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고65,784

C3D03065E

Cree/Wolfspeed

DIODE SCHOTTKY 650V 3A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,392

C4D05120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 8.2A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8.2A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고6,576

C3D04060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고13,428

C3D03060E

Cree/Wolfspeed

DIODE SCHOTTKY 600V 3A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 155pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고6,896

C2D05120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 17.5A TO252

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 455pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고7,188

C3D06065I

Cree/Wolfspeed

DIODE SCHOTTKY 650V 13A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 13A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 650V
Capacitance @ Vr, F: 295pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Supplier Device Package: TO-220-2 Isolated Tab
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2 Isolated Tab

재고19,308

C4D20120A

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 20A TO220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고16,320

CVFD20065A

Cree/Wolfspeed

DIODE SCHKY SIC 650V 20A TO-220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 80µA @ 650V
Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-220-2

재고7,260

C4D05120E

Cree/Wolfspeed

DIODE SCHOTTKY 1.2KV 5A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 150µA @ 1200V
Capacitance @ Vr, F: 390pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고59,508

CSD20060D

Cree/Wolfspeed

DIODE ARRAY SCHOTTKY 600V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 16.5A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3

패키지: TO-247-3

재고15,108

CGHV59350F-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV59350F

Type: HEMT
Frequency: 5.2GHz ~ 5.9GHz
For Use With/Related Products: CGHV59350
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고6,642

CGHV96100F2-TB

Cree/Wolfspeed

TEST FIXTURE FOR CGHV96100F2

Type: FET
Frequency: 8.4GHz ~ 9.6GHz
For Use With/Related Products: CGHV96100
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고4,932

CMPA0060002F-TB

Cree/Wolfspeed

BOARD DEMO AMP CIRC CMPA0060002

Type: Amplifier
Frequency: 6GHz
For Use With/Related Products: CMPA0060002F
Supplied Contents: Partially Populated Board - Main IC Not Included

패키지: -

재고3,942