이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor |
TRANS SJT 600V 100A
|
패키지: TO-258-3, TO-258AA |
재고4,272 |
|
SiC (Silicon Carbide Junction Transistor) | 600V | 100A (Tc) | - | - | - | - | - | - | 769W (Tc) | 25 mOhm @ 50A | -55°C ~ 225°C (TJ) | Through Hole | TO-258 | TO-258-3, TO-258AA |
||
GeneSiC Semiconductor |
TRANS SJT 650V 15A TO-257
|
패키지: TO-257-3 |
재고2,736 |
|
SiC (Silicon Carbide Junction Transistor) | 650V | 15A (Tc) (155°C) | - | - | - | 1534pF @ 35V | - | - | 172W (Tc) | 105 mOhm @ 15A | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
||
GeneSiC Semiconductor |
TRANS SJT 650V 16A TO276
|
패키지: TO-276AA |
재고2,368 |
|
SiC (Silicon Carbide Junction Transistor) | 650V | 16A (Tc) (155°C) | - | - | - | 1534pF @ 35V | - | - | 330W (Tc) | 105 mOhm @ 16A | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
||
GeneSiC Semiconductor |
TRANS SJT 650V 7A TO-257
|
패키지: TO-257-3 |
재고3,536 |
|
SiC (Silicon Carbide Junction Transistor) | 650V | 7A (Tc) (165°C) | - | - | - | 720pF @ 35V | - | - | 80W (Tc) | 170 mOhm @ 7A | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
||
GeneSiC Semiconductor |
TRANS SJT 650V 8A TO276
|
패키지: TO-276AA |
재고5,328 |
|
SiC (Silicon Carbide Junction Transistor) | 650V | 8A (Tc) (158°C) | - | - | - | 720pF @ 35V | - | - | 200W (Tc) | 170 mOhm @ 8A | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
||
GeneSiC Semiconductor |
TRANS SJT 650V 4A TO-257
|
패키지: TO-257-3 |
재고4,944 |
|
SiC (Silicon Carbide Junction Transistor) | 650V | 4A (Tc) (165°C) | - | - | - | 324pF @ 35V | - | - | 47W (Tc) | 415 mOhm @ 4A | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
||
GeneSiC Semiconductor |
TRANS SJT 650V 4A TO276
|
패키지: TO-276AA |
재고6,816 |
|
SiC (Silicon Carbide Junction Transistor) | 650V | 4A (Tc) (165°C) | - | - | - | 324pF @ 35V | - | - | 125W (Tc) | 415 mOhm @ 4A | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
||
GeneSiC Semiconductor |
TRANS SJT 1.7KV 100A
|
패키지: TO-247-3 |
재고6,864 |
|
SiC (Silicon Carbide Junction Transistor) | 1700V | 100A (Tc) | - | - | - | - | - | - | 583W (Tc) | 25 mOhm @ 50A | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
GeneSiC Semiconductor |
TRANSISTOR 1200V 100A TO263-7
|
패키지: - |
재고3,024 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
GeneSiC Semiconductor |
TRANS SJT 1700V 16A TO-247AB
|
패키지: TO-247-3 |
재고2,896 |
|
SiC (Silicon Carbide Junction Transistor) | 1700V | 16A (Tc) (90°C) | - | - | - | - | - | - | 282W (Tc) | 110 mOhm @ 16A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 45A TO247
|
패키지: TO-247-3 |
재고3,184 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | - | - | 3091pF @ 800V | - | - | 282W (Tc) | 50 mOhm @ 20A | -55°C ~ 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1.2KV 20A
|
패키지: TO-247-3 |
재고7,728 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 20A (Tc) | - | - | - | - | - | - | 282W (Tc) | 70 mOhm @ 20A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 6A TO-247AB
|
패키지: TO-247-3 |
재고6,240 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 6A (Tc) (90°C) | - | - | - | - | - | - | - | 220 mOhm @ 6A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 5A
|
패키지: TO-247-3 |
재고4,432 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 5A (Tc) | - | - | - | - | - | - | 106W (Tc) | 280 mOhm @ 5A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1.2KV 10A
|
패키지: TO-247-3 |
재고3,248 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 10A (Tc) | - | - | - | - | - | - | 170W (Tc) | 140 mOhm @ 10A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1700V 160A SOT227
|
패키지: SOT-227-4, miniBLOC |
재고2,064 |
|
SiC (Silicon Carbide Junction Transistor) | 1700V | 160A | - | - | - | 14400pF @ 800V | - | - | 535W (Tc) | 10 mOhm @ 100A | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
GeneSiC Semiconductor |
TRANS SJT 300V 9A
|
패키지: TO-46-3 |
재고6,768 |
|
SiC (Silicon Carbide Junction Transistor) | 300V | 9A (Tc) | - | - | - | - | - | - | 20W (Tc) | 240 mOhm @ 5A | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
||
GeneSiC Semiconductor |
TRANS SJT 100V 9A
|
패키지: TO-46-3 |
재고6,804 |
|
SiC (Silicon Carbide Junction Transistor) | 100V | 9A (Tc) | - | - | - | - | - | - | 20W (Tc) | 240 mOhm @ 5A | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1700V 4A TO-247AB
|
패키지: TO-247-3 |
재고5,216 |
|
SiC (Silicon Carbide Junction Transistor) | 1700V | 4A (Tc) (95°C) | - | - | - | - | - | - | 106W (Tc) | 480 mOhm @ 4A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 160A SOT227
|
패키지: SOT-227-4, miniBLOC |
재고6,432 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 160A | - | - | - | 14400pF @ 800V | - | - | 535W (Tc) | 10 mOhm @ 100A | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 25A TO263-7
|
패키지: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
재고8,640 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 25A (Tc) | - | - | - | 1403pF @ 800V | - | - | 170W (Tc) | 100 mOhm @ 10A | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 25A
|
패키지: - |
재고18,264 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 25A (Tc) | - | - | - | 1403pF @ 800V | - | - | 170W (Tc) | 120 mOhm @ 10A | 175°C (TJ) | Surface Mount | - | - |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 15A
|
패키지: - |
재고21,036 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 15A (Tc) | - | - | - | - | - | - | 106W (Tc) | - | 175°C (TJ) | - | - | - |
||
GeneSiC Semiconductor |
TRANS SJT 1700V 8A TO-247AB
|
패키지: TO-247-3 |
재고19,104 |
|
SiC (Silicon Carbide Junction Transistor) | 1700V | 8A (Tc) (90°C) | - | - | - | - | - | - | 48W (Tc) | 250 mOhm @ 8A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 45A
|
패키지: - |
재고7,776 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | - | - | 3091pF @ 800V | - | - | 282W (Tc) | 60 mOhm @ 20A | 175°C (TJ) | - | - | - |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 3A TO-247AB
|
패키지: TO-247-3 |
재고7,620 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 3A (Tc) (95°C) | - | - | - | - | - | - | 15W (Tc) | 460 mOhm @ 3A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
GeneSiC Semiconductor |
TRANS SJT 1.2KV 50A
|
패키지: TO-247-3 |
재고6,160 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 100A (Tc) | - | - | - | 7209pF @ 800V | - | - | 583W (Tc) | 25 mOhm @ 50A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |