GeneSiC Semiconductor 제품 - 다이오드 - 정류기 - 어레이

부품 번호	제조업체	설명	패키지	재고	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Mounting Type	Package / Case	Supplier Device Package
MBR40040CTR	GeneSiC Semiconductor	DIODE MODULE 40V 400A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고6,064	Schottky	40V	400A (DC)	650mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-55°C ~ 150°C	Chassis Mount	Twin Tower	Twin Tower
MBRT30040R	GeneSiC Semiconductor	DIODE MODULE 40V 300A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고5,808	Schottky, Reverse Polarity	40V	300A (DC)	750mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-55°C ~ 150°C	Chassis Mount	Three Tower	Three Tower
MBR30035CTR	GeneSiC Semiconductor	DIODE MODULE 35V 300A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 300A Voltage - Forward (Vf) (Max) @ If: 700mV @ 150A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 35V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고7,824	Schottky, Reverse Polarity	35V	300A	700mV @ 150A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 35V	-55°C ~ 150°C	Chassis Mount	Twin Tower	Twin Tower
MBR12045CTR	GeneSiC Semiconductor	DIODE MODULE 45V 120A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고6,160	Schottky, Reverse Polarity	45V	120A (DC)	650mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-55°C ~ 150°C	Chassis Mount	Twin Tower	Twin Tower
MBR12035 CTR	GeneSiC Semiconductor	DIODE MODULE 35V 120A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 120A (DC) Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고7,296	Schottky	35V	120A (DC)	650mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 20V	-55°C ~ 150°C	Chassis Mount	Twin Tower	Twin Tower
MBR2X100A180	GeneSiC Semiconductor	DIODE SCHOTTKY 180V 200A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 180V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 920mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 180V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고6,704	Schottky	180V	200A	920mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 180V	-40°C ~ 150°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MBR2X120A045	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 240A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 240A Voltage - Forward (Vf) (Max) @ If: 700mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,136	Schottky	45V	240A	700mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-40°C ~ 150°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MUR2X100A04	GeneSiC Semiconductor	DIODE GEN PURP 400V 200A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 400V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,872	Standard	400V	200A	1.3V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	25µA @ 400V	-55°C ~ 175°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MUR2X100A02	GeneSiC Semiconductor	DIODE GEN PURP 200V 200A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 200A Voltage - Forward (Vf) (Max) @ If: 1V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,840	Standard	200V	200A	1V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 200V	-55°C ~ 175°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MBR2X050A200	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 100A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 100A Voltage - Forward (Vf) (Max) @ If: 920mV @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 200V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고5,728	Schottky	200V	100A	920mV @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 200V	-40°C ~ 150°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MUR2X060A06	GeneSiC Semiconductor	DIODE GEN PURP 600V 120A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 120A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 25µA @ 600V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고6,372	Standard	600V	120A	1.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	25µA @ 600V	-55°C ~ 175°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MUR2X060A02	GeneSiC Semiconductor	DIODE GEN PURP 200V 120A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 120A Voltage - Forward (Vf) (Max) @ If: 1V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고4,752	Standard	200V	120A	1V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 200V	-55°C ~ 175°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MBR2X080A045	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 160A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 160A Voltage - Forward (Vf) (Max) @ If: 700mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고6,036	Schottky	45V	160A	700mV @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-40°C ~ 150°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MBR2X060A045	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 120A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 120A Voltage - Forward (Vf) (Max) @ If: 700mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고6,960	Schottky	45V	120A	700mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-40°C ~ 150°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MUR2X060A04	GeneSiC Semiconductor	DIODE GEN PURP 400V 120A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 120A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 25µA @ 400V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고4,480	Standard	400V	120A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	25µA @ 400V	-55°C ~ 175°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MBR2X080A100	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 160A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 160A Voltage - Forward (Vf) (Max) @ If: 840mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고4,800	Schottky	100V	160A	840mV @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-40°C ~ 150°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MBR2X030A100	GeneSiC Semiconductor	DIODE SCHOTTKY 100V 60A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고4,800	Schottky	100V	60A	840mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-40°C ~ 150°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MBR2X030A045	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 60A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Operating Temperature - Junction: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고6,384	Schottky	45V	60A	700mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-40°C ~ 150°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MUR2X030A02	GeneSiC Semiconductor	DIODE GEN PURP 200V 60A SOT227 Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 60A Voltage - Forward (Vf) (Max) @ If: 1V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 25µA @ 200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227	패키지: SOT-227-4, miniBLOC	재고4,624	Standard	200V	60A	1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	25µA @ 200V	-55°C ~ 175°C	Chassis Mount	SOT-227-4, miniBLOC	SOT-227
MBRT40045	GeneSiC Semiconductor	DIODE MODULE 45V 400A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고5,632	Schottky	45V	400A (DC)	750mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-55°C ~ 150°C	Chassis Mount	Three Tower	Three Tower
MBR40045CTS	GeneSiC Semiconductor	DIODE MODULE 45V 400A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 36V Operating Temperature - Junction: -40°C ~ 175°C Mounting Type: Screw Mount Package / Case: SOT-227-4 Supplier Device Package: SOT-227	패키지: SOT-227-4	재고5,488	Schottky	45V	400A (DC)	1.2V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 36V	-40°C ~ 175°C	Screw Mount	SOT-227-4	SOT-227
MBR400100CTR	GeneSiC Semiconductor	DIODE MODULE 100V 400A 2TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고7,792	Schottky, Reverse Polarity	100V	400A (DC)	840mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-55°C ~ 150°C	Chassis Mount	Twin Tower	Twin Tower
MBR200100CTS	GeneSiC Semiconductor	DIODE MODULE 100V 200A SOT227 Diode Configuration: 2 Independent Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 950mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 80V Operating Temperature - Junction: -40°C ~ 175°C Mounting Type: Screw Mount Package / Case: SOT-227-4 Supplier Device Package: SOT-227	패키지: SOT-227-4	재고4,624	Schottky	100V	200A (DC)	950mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 80V	-40°C ~ 175°C	Screw Mount	SOT-227-4	SOT-227
MURT40040R	GeneSiC Semiconductor	DIODE MODULE 400V 400A 3TOWER Diode Configuration: 1 Pair Common Anode Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 180ns Current - Reverse Leakage @ Vr: 25µA @ 50V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고3,888	Standard, Reverse Polarity	400V	200A (DC)	1.35V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	180ns	25µA @ 50V	-55°C ~ 150°C	Chassis Mount	Three Tower	Three Tower
MBRT400100	GeneSiC Semiconductor	DIODE MODULE 100V 400A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고5,664	Schottky	100V	400A (DC)	880mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-55°C ~ 150°C	Chassis Mount	Three Tower	Three Tower
MBRT20040	GeneSiC Semiconductor	DIODE MODULE 40V 200A 3TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io) (per Diode): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Three Tower Supplier Device Package: Three Tower	패키지: Three Tower	재고7,552	Schottky	40V	200A (DC)	750mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-55°C ~ 150°C	Chassis Mount	Three Tower	Three Tower
FST16035	GeneSiC Semiconductor	DIODE MODULE 35V 160A TO249AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io) (per Diode): 160A Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: TO-249AB Supplier Device Package: TO-249AB	패키지: TO-249AB	재고5,968	Schottky	35V	160A	750mV @ 160A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-55°C ~ 150°C	Chassis Mount	TO-249AB	TO-249AB
MBR400100CT	GeneSiC Semiconductor	DIODE MODULE 100V 400A 2TOWER Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io) (per Diode): 400A (DC) Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 20V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Twin Tower Supplier Device Package: Twin Tower	패키지: Twin Tower	재고6,000	Schottky	100V	400A (DC)	840mV @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 20V	-55°C ~ 150°C	Chassis Mount	Twin Tower	Twin Tower
GB20SLT12-247D	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 25A TO247D Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 25A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고8,592	Silicon Carbide Schottky	1200V	25A	1.8V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 1200V	-55°C ~ 175°C	Through Hole	TO-247-3	TO-247
GB10SLT12-247D	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 12A TO247D Diode Configuration: 1 Pair Common Cathode Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io) (per Diode): 12A Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1200V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	패키지: TO-247-3	재고6,732	Silicon Carbide Schottky	1200V	12A	1.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 1200V	-55°C ~ 175°C	Through Hole	TO-247-3	TO-247

MBR40040CTR

GeneSiC Semiconductor

DIODE MODULE 40V 400A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고6,064

Schottky

40V

400A (DC)

650mV @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-55°C ~ 150°C

Chassis Mount

Twin Tower

MBRT30040R

GeneSiC Semiconductor

DIODE MODULE 40V 300A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고5,808

Schottky, Reverse Polarity

40V

300A (DC)

750mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-55°C ~ 150°C

Chassis Mount

Three Tower

MBR30035CTR

GeneSiC Semiconductor

DIODE MODULE 35V 300A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 300A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 150A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고7,824

Schottky, Reverse Polarity

35V

300A

700mV @ 150A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 35V

-55°C ~ 150°C

Chassis Mount

Twin Tower

MBR12045CTR

GeneSiC Semiconductor

DIODE MODULE 45V 120A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고6,160

Schottky, Reverse Polarity

45V

120A (DC)

650mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-55°C ~ 150°C

Chassis Mount

Twin Tower

MBR12035 CTR

GeneSiC Semiconductor

DIODE MODULE 35V 120A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 120A (DC)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고7,296

Schottky

35V

120A (DC)

650mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 20V

-55°C ~ 150°C

Chassis Mount

Twin Tower

MBR2X100A180

GeneSiC Semiconductor

DIODE SCHOTTKY 180V 200A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 180V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 180V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고6,704

Schottky

180V

200A

920mV @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 180V

-40°C ~ 150°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MBR2X120A045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 240A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 240A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,136

Schottky

45V

240A

700mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-40°C ~ 150°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MUR2X100A04

GeneSiC Semiconductor

DIODE GEN PURP 400V 200A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 400V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,872

Standard

400V

200A

1.3V @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

90ns

25µA @ 400V

-55°C ~ 175°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MUR2X100A02

GeneSiC Semiconductor

DIODE GEN PURP 200V 200A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 200A
Voltage - Forward (Vf) (Max) @ If: 1V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,840

Standard

200V

200A

1V @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 200V

-55°C ~ 175°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MBR2X050A200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 100A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 200V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고5,728

Schottky

200V

100A

920mV @ 50A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 200V

-40°C ~ 150°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MUR2X060A06

GeneSiC Semiconductor

DIODE GEN PURP 600V 120A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90ns
Current - Reverse Leakage @ Vr: 25µA @ 600V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고6,372

Standard

600V

120A

1.5V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

90ns

25µA @ 600V

-55°C ~ 175°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MUR2X060A02

GeneSiC Semiconductor

DIODE GEN PURP 200V 120A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고4,752

Standard

200V

120A

1V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 200V

-55°C ~ 175°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MBR2X080A045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 160A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 160A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고6,036

Schottky

45V

160A

700mV @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-40°C ~ 150°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MBR2X060A045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 120A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고6,960

Schottky

45V

120A

700mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-40°C ~ 150°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MUR2X060A04

GeneSiC Semiconductor

DIODE GEN PURP 400V 120A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 25µA @ 400V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고4,480

Standard

400V

120A

1.3V @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

25µA @ 400V

-55°C ~ 175°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MBR2X080A100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 160A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 160A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고4,800

Schottky

100V

160A

840mV @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-40°C ~ 150°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MBR2X030A100

GeneSiC Semiconductor

DIODE SCHOTTKY 100V 60A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고4,800

Schottky

100V

60A

840mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-40°C ~ 150°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MBR2X030A045

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 60A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고6,384

Schottky

45V

60A

700mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-40°C ~ 150°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MUR2X030A02

GeneSiC Semiconductor

DIODE GEN PURP 200V 60A SOT227

Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 25µA @ 200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227

패키지: SOT-227-4, miniBLOC

재고4,624

Standard

200V

60A

1V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

25µA @ 200V

-55°C ~ 175°C

Chassis Mount

SOT-227-4, miniBLOC

SOT-227

MBRT40045

GeneSiC Semiconductor

DIODE MODULE 45V 400A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고5,632

Schottky

45V

400A (DC)

750mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-55°C ~ 150°C

Chassis Mount

Three Tower

MBR40045CTS

GeneSiC Semiconductor

DIODE MODULE 45V 400A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 36V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Screw Mount
Package / Case: SOT-227-4
Supplier Device Package: SOT-227

패키지: SOT-227-4

재고5,488

Schottky

45V

400A (DC)

1.2V @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5µA @ 36V

-40°C ~ 175°C

Screw Mount

SOT-227-4

SOT-227

MBR400100CTR

GeneSiC Semiconductor

DIODE MODULE 100V 400A 2TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고7,792

Schottky, Reverse Polarity

100V

400A (DC)

840mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-55°C ~ 150°C

Chassis Mount

Twin Tower

MBR200100CTS

GeneSiC Semiconductor

DIODE MODULE 100V 200A SOT227

Diode Configuration: 2 Independent
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 80V
Operating Temperature - Junction: -40°C ~ 175°C
Mounting Type: Screw Mount
Package / Case: SOT-227-4
Supplier Device Package: SOT-227

패키지: SOT-227-4

재고4,624

Schottky

100V

200A (DC)

950mV @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 80V

-40°C ~ 175°C

Screw Mount

SOT-227-4

SOT-227

MURT40040R

GeneSiC Semiconductor

DIODE MODULE 400V 400A 3TOWER

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고3,888

Standard, Reverse Polarity

400V

200A (DC)

1.35V @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

180ns

25µA @ 50V

-55°C ~ 150°C

Chassis Mount

Three Tower

MBRT400100

GeneSiC Semiconductor

DIODE MODULE 100V 400A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 880mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고5,664

Schottky

100V

400A (DC)

880mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-55°C ~ 150°C

Chassis Mount

Three Tower

MBRT20040

GeneSiC Semiconductor

DIODE MODULE 40V 200A 3TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io) (per Diode): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Three Tower
Supplier Device Package: Three Tower

패키지: Three Tower

재고7,552

Schottky

40V

200A (DC)

750mV @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-55°C ~ 150°C

Chassis Mount

Three Tower

FST16035

GeneSiC Semiconductor

DIODE MODULE 35V 160A TO249AB

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 160A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 160A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-249AB
Supplier Device Package: TO-249AB

패키지: TO-249AB

재고5,968

Schottky

35V

160A

750mV @ 160A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

-55°C ~ 150°C

Chassis Mount

TO-249AB

MBR400100CT

GeneSiC Semiconductor

DIODE MODULE 100V 400A 2TOWER

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io) (per Diode): 400A (DC)
Voltage - Forward (Vf) (Max) @ If: 840mV @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 20V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Twin Tower
Supplier Device Package: Twin Tower

패키지: Twin Tower

재고6,000

Schottky

100V

400A (DC)

840mV @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 20V

-55°C ~ 150°C

Chassis Mount

Twin Tower

GB20SLT12-247D

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 25A TO247D

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 25A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고8,592

Silicon Carbide Schottky

1200V

25A

1.8V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 1200V

-55°C ~ 175°C

Through Hole

TO-247-3

TO-247

GB10SLT12-247D

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 12A TO247D

Diode Configuration: 1 Pair Common Cathode
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 12A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1200V
Operating Temperature - Junction: -55°C ~ 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

패키지: TO-247-3

재고6,732

Silicon Carbide Schottky

1200V

12A

1.9V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 1200V

-55°C ~ 175°C

Through Hole

TO-247-3

TO-247