Vishay's advanced power MOSFET transistors are ideal for applications requiring limited heat dissipation | Heisener Electronics
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Vishay's advanced power MOSFET transistors are ideal for applications requiring limited heat dissipation

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포스트 날짜: 2022-11-30, Vishay Dale

Power MOSFET technology is the key to Vishay's advanced power MOSFET transistor production line. The efficient geometry and unique processing realization of this latest "art state" design: extremely low on state resistance combined with high transconductance; Superior reverse energy and diode recovery dV/dt capability.

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Power MOSFET transistors also have all the established advantages of MOSFETs, such as voltage control, very fast switching, ease of parallelism and temperature stability of electrical parameters. Surface mount packaging improves circuit performance by reducing stray inductance and capacitance. DPAK (to - 252) surface mount package brings the advantages of power MOSFET, and it is required for mass application in PC board surface mount. Surface mount option IRFR9012, SiHFR9012 provides 16mm tape.

The equipment of direct lead scheme IRFU9012 and SiHFU9012 is called IPAK (TO-251). They are very suitable for applications requiring limited heat dissipation, such as computers and peripherals, telecommunications equipment, dc to dc converters and a wide range of consumer products.

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